OSC Polymer Patterning via UV Crosslinking

The patent incorporates UV-curable functional groups directly into the OSC polymer structure, converting the harmful effect of UV exposure into a beneficial self-patterning mechanism. When exposed to UV light through a photomask, the irradiated regions undergo crosslinking to form insoluble gel structures, while unexposed regions remain soluble and can be removed with mild solvents. This transforms UV radiation from a potential damage source into a precise patterning tool that actually protects the desired pattern regions.

The patent introduces photosensitizers as intermediaries that mediate the patterning process. These photosensitizers absorb UV light and transfer energy to the UV-curable groups in the OSC polymer, enabling crosslinking at lower UV intensities and wavelengths that are less damaging to the organic semiconductor material. This intermediary mechanism allows precise pattern formation while minimizing thermal and photodamage to the OSC layer.

The patent merges the patterning function directly into the OSC polymer material by incorporating UV-curable functional groups into the polymer backbone or side chains. This integration eliminates the need for separate photoresist coating, baking, and stripping steps. The OSC layer itself serves as both the semiconductor active layer and the patternable photoresist, combining multiple functions into a single material system that reduces processing steps and complexity.

The patent creates a multi-functional OSC polymer that simultaneously serves as the semiconductor active layer, the patternable photoresist, and the structural framework of the device. The UV-curable groups embedded in the OSC polymer enable it to perform both electronic transport and photopatterning functions, eliminating the need for separate specialized materials for each function and simplifying the overall device fabrication process.