Oscillation Circuit Frequency Correction With Oxide Semiconductor Switches
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge is to develop a semiconductor device that can inhibit the increase in circuit area and power consumption while maintaining performance, particularly for 5G communication systems where power saving and downsizing are crucial without compromising performance.
Innovation Solution
The semiconductor device incorporates an oscillation circuit with a frequency correction circuit, utilizing silicon and oxide semiconductor transistors, and a switching circuit to adjust oscillation frequency and control power consumption, allowing for compact integration and efficient power management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the circuit is downsized to reduce area, then the circuit area is reduced, but power consumption increases
Solution Approach 1:
The patent applies local quality by using different semiconductor materials for different transistor types within the same circuit. Specifically, oxide semiconductor transistors are used for switching elements where low leakage is critical, while silicon semiconductor transistors are used for drive elements requiring high current drive capability. This material differentiation allows the circuit to achieve both small area and low power consumption by optimizing each component's material selection according to its specific functional requirements.
2Productivity
If performance is improved to meet 5G requirements, then communication speed increases, but power consumption and circuit area increase
Solution Approach 1:
The patent employs parameter changes by utilizing the distinct electrical characteristics of different semiconductor materials. Oxide semiconductor transistors provide extremely low off-state current (10^-21 to 10^-24 A), enabling ultra-low power consumption for switching operations. Meanwhile, silicon semiconductor transistors provide high on-state current for efficient signal amplification and processing. This combination allows the circuit to achieve high communication speed required for 5G while maintaining low power consumption through optimized material parameter selection.
3Measurement precision
If more transistors are added to the frequency correction circuit to improve frequency adjustment precision, then frequency correction capability improves, but circuit area increases
Solution Approach 1:
The patent applies dimensionality change by stacking transistor layers vertically to achieve high integration density. The frequency correction circuit uses multiple layers of oxide semiconductor transistors arranged in a three-dimensional configuration, allowing precise frequency adjustment with multiple transistors while minimizing the planar footprint. This vertical stacking approach enables the circuit to achieve high frequency correction precision without proportionally increasing the circuit area.
Data Source
AI summary
A semiconductor device with a novel structure is provided. The semiconductor device includes an oscillation circuit including a first coil, a second coil, a first capacitor, a second capacitor, a first transistor, and a second transistor and a frequency correction circuit including a third capacitor, a fourth capacitor, a third transistor, a fourth transistor, and a switching circuit. The switching circuit has a function of controlling a conduction state or a non-conduction state of the third transistor and the fourth transistor. The frequency correction circuit is provided above the oscillation circuit and has a function of adjusting an oscillation frequency of the oscillation circuit. The first transistor and the second transistor each include a semiconductor layer containing silicon in a channel formation region. The third transistor and the fourth transistor each include a semiconductor layer containing an oxide semiconductor in a channel formation region.