Oscillator Power Transfer Device With Integrated Transformer
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Solution Overview
Problem
Conventional high-power systems face challenges in achieving efficient power transfer across an isolation barrier while being cost-effective, as standard transformers are size and cost prohibitive for certain applications, and existing power transfer devices struggle with high voltage levels that conventional CMOS devices cannot support.
Innovation Solution
A power transfer device is developed with a transformer formed on an insulating substrate, coupled between primary and secondary integrated circuit dies, using an oscillator circuit with cascode transistors and Schottky diodes to achieve high-efficiency power transfer, capable of handling peak voltages up to three times the input voltage, and incorporating a feedback mechanism for voltage regulation across the isolation barrier.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a standard transformer is used for power transfer, then power transfer efficiency is improved (70%-95%), but device size and cost become prohibitive
Solution Approach 1:
The patent combines the transformer with the integrated circuit dies by forming the transformer on an insulating substrate that is directly disposed on conductors in a package housing the IC dies. This integration merges what were previously separate components (transformer and ICs) into a single compact unit, achieving high power transfer efficiency while dramatically reducing the overall device size and eliminating the need for large discrete transformers.
Solution Approach 2:
The transformer is nested within the package housing that contains the primary and secondary IC dies. The insulating substrate with the transformer is disposed directly on conductors inside the package, creating a nested structure where the transformer is embedded within the existing package architecture rather than occupying external space.
2Ease of manufacture
If conventional CMOS devices are used, then manufacturing cost is reduced, but voltage handling capability is insufficient for high-power applications
Solution Approach 1:
The patent introduces an insulating substrate as an intermediary between the primary and secondary IC dies. This substrate not only provides electrical isolation but also serves as a platform for forming the transformer windings. The intermediary structure enables high voltage handling by providing proper insulation and spacing while keeping the IC dies themselves as standard CMOS devices, thus maintaining manufacturing cost benefits.
Solution Approach 2:
The patent changes the voltage handling capability not by modifying the CMOS devices themselves but by changing the system architecture - introducing the transformer on an insulating substrate that can withstand high voltages. This allows the CMOS devices to operate at their normal voltage levels while the overall system handles high power through the transformer's voltage transformation capability.
3Reliability
If discrete transformer components are used, then power transfer reliability is improved, but device complexity and assembly difficulty increase
Solution Approach 1:
The patent merges the transformer formation process with the IC die packaging process. The transformer is formed on an insulating substrate that is then directly disposed on conductors in the same package housing that contains the IC dies. This merging of processes eliminates the need for separate assembly steps and reduces device complexity while maintaining the reliability benefits of using a transformer for isolated power transfer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient, low-cost power transfer with high efficiency and fault tolerance, supporting high voltage levels beyond conventional CMOS capabilities, reducing size and material costs, and allowing for integrated transformer design in a compact package.
Implementation Method 1
a transformer formed on an insulating substrate disposed on conductive structures within an integrated circuit package... electrically coupling the transformer between the primary-side circuit and the secondary-side circuit
Data Source
AI summary
A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.