On-Chip Osmotic Airflow Cooling for Semiconductor Hot Spots
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Solution Overview
Problem
Integrated circuit devices face inefficiencies in heat dissipation due to non-uniform temperature profiles caused by conventional heat spreading structures that cool all or most of the IC die surface, leading to potential damage and cracking.
Innovation Solution
The implementation of a cooling apparatus that uses an electron emitter to attach electrons to air particulates, which are then accelerated by an electric field to create a targeted airflow that carries heat away from specific portions of the semiconductor element, providing localized and efficient cooling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat spreading structures are coupled to all or substantially all of the IC die surface, then heat conduction is improved, but the temperature profile becomes non-uniform causing surface cracking
Solution Approach 1:
The patent applies local quality by transitioning from uniform full-surface cooling to localized cooling at specific hot spots. The cooling apparatus is positioned to provide concentrated cooling only where heat generation is highest, creating different thermal conditions in different locations of the IC die surface. This resolves the contradiction by improving heat dissipation efficiency through targeted cooling while maintaining surface temperature uniformity to prevent cracking.
2Temperature
If conventional heat sinks and heat slugs are used, then heat conduction is improved, but cooling efficiency deteriorates due to non-uniform temperature distribution
Solution Approach 1:
The patent implements local quality by positioning the cooling apparatus to provide concentrated cooling at specific hot spots rather than uniform cooling across the entire surface. This localized approach improves cooling efficiency by directing cooling resources to where they are most needed, while still maintaining effective heat conduction from the IC die through the strategically positioned cooling structure.
3Temperature
If uniform cooling is applied across the IC die surface, then heat dissipation is improved, but temperature uniformity deteriorates leading to thermal stress
Solution Approach 1:
The patent resolves this contradiction by applying local quality through selective localized cooling at hot spots rather than uniform cooling. This approach improves overall heat dissipation while maintaining temperature profile uniformity across the IC die surface, preventing thermal stress and cracking by avoiding the non-uniform temperature distribution caused by conventional uniform cooling methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for targeted, localized cooling at specific hot spots on the IC die, enhancing heat dissipation and reducing the risk of thermal damage by creating a more uniform thermal profile, thus improving the reliability and performance of the semiconductor element.
Implementation Method 1
an electron emitter configured to emit electrons such that at least some of the emitted electrons become attached to air particulates
Implementation Method 2
an air accelerator configured to generate an electric field that accelerates the air particulates toward the air accelerator to create an air flow
Implementation Method 3
The air flow carries heat away from the at least a portion of the semiconductor element
Data Source
AI summary
An apparatus for cooling a semiconductor element is provided. The apparatus can include an electron emitter configured to emit electrons such that at least some of the emitted electrons become attached to air particulates and an air accelerator configured to generate an electric field that accelerates the air particulates toward the air accelerator to create an air flow over at least a portion of the semiconductor element. The air flow carries heat away from the at least a portion of the semiconductor element.