Organic Thin-Film Transistor Composition for Atmospheric Stability
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Solution Overview
Problem
Existing organic thin film transistors suffer from significant performance deterioration in atmospheric conditions, particularly in terms of carrier mobility and durability, without the protection of special layers.
Innovation Solution
Incorporating a specific compound represented by Formula (1) into the organic semiconductor film, which includes functional groups such as —N(RN)— and —O—, enhancing carrier mobility and stability even in the presence of oxygen and water.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional organic semiconductor compounds are used in the organic thin film transistor, then the device can be manufactured with weight reduction and cost reduction, but the carrier mobility deteriorates significantly in atmospheric conditions over time
Solution Approach 1:
The patent applies parameter changes by modifying the chemical structure of the organic semiconductor compound. Specifically, it uses a perylene bisimide core with thionated carbonyl groups (converting C=O to C=S) and introduces specific substituents at defined positions. This structural parameter change enhances the compound's resistance to atmospheric degradation while maintaining high carrier mobility, directly resolving the contradiction between reliability and durability in atmospheric conditions
Solution Approach 2:
The patent employs composite material principles by creating a sophisticated molecular structure that combines multiple functional elements: the perylene bisimide core provides charge transport pathways, the thionated groups enhance stability, and the substituents (including alkyl chains and aromatic groups) provide both solubility and environmental protection. This composite molecular architecture achieves both high initial performance and long-term atmospheric stability
2Device complexity
If no protective or sealing layer is provided to reduce device complexity, then manufacturing becomes simpler and cost-effective, but the organic thin film transistor performance deteriorates rapidly in the atmosphere
Solution Approach 1:
The patent implements self-service by designing the organic semiconductor compound itself to possess inherent atmospheric resistance. The thionated perylene bisimide structure with specific substituents creates a self-protecting material that resists oxidation and degradation without requiring external protective layers. This eliminates the need for complex sealing structures while maintaining reliability, directly addressing the contradiction between device complexity and performance stability
Solution Approach 2:
By changing the chemical parameters of the semiconductor material (introducing sulfur-containing groups and specific substituents), the patent inherently confers atmospheric resistance to the material. This material-level parameter change replaces the need for structural protective layers, achieving both simplicity and reliability simultaneously
Data Source
AI summary
Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.