Organic Thin Film Transistor Laser Ablation Edge Trimming
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Solution Overview
Problem
The existing methods for fabricating organic thin film transistors (OTFTs) face challenges in achieving uniform linewidths and shapes for organic layers and metal interconnections, leading to increased interconnection resistances and degradation of device characteristics, particularly when using inkjet printing due to surface properties and the need for advanced surface processing techniques.
Innovation Solution
The method involves forming a gate electrode, source and drain electrodes, and a semiconductor layer using inkjet printing, followed by laser ablation to trim the edges and achieve uniformity, reducing interconnection resistances and maintaining the integrity of the organic semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If inkjet printing method is used to form organic layers and metal interconnections, then fabrication cost is reduced and process is simplified, but linewidth and shape uniformity deteriorates due to surface properties
Solution Approach 1:
Surface processing is performed in advance before inkjet printing to modify the substrate surface properties. This preliminary action creates a uniform surface that enables the inkjet printing method to produce organic layers and metal interconnections with consistent linewidths and shapes, resolving the contradiction between process simplicity and manufacturing precision.
2Ease of manufacture
If surface processing is performed using chemical etching or plasma etching, then inkjet printing capability is improved, but linewidth and shape uniformity still deteriorates
Solution Approach 1:
The invention changes the surface energy parameters of the substrate through surface processing to achieve optimal values for inkjet printing. By controlling surface energy within a specific range, the method achieves both good inkjet printing capability and uniform linewidths and shapes, resolving the contradiction between manufacturability and precision.
3Device complexity
If inkjet printing is used without adequate surface processing, then fabrication process is simplified, but interconnection resistances increase due to non-uniform linewidths and shapes
Solution Approach 1:
Adequate surface processing is performed as a preliminary step before inkjet printing to ensure uniform deposition. This preliminary action prevents non-uniform linewidths and shapes, thereby maintaining low interconnection resistances while keeping the overall fabrication process relatively simple.
Solution Approach 2:
The invention replaces complex photolithography processes with inkjet printing combined with surface processing. This substitution maintains process simplicity while achieving uniform interconnections with low resistance by optimizing the surface properties for direct inkjet deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of OTFTs with reduced interconnection resistances and improved device characteristics by ensuring uniform linewidths and shapes of the organic layers and metal interconnections, thereby preventing degradation and enhancing the performance of OTFTs.
Implementation Method 1
The gate electrode is formed by an inkjet printing method and ablated by a laser
Implementation Method 2
a method of fabricating an OTFT includes providing a substrate, forming a gate electrode on the substrate
Data Source
AI summary
An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.