OTP Cell Layout Area Reduction via Integrated Well Bias Tap
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Solution Overview
Problem
Existing one-time programmable (OTP) cell designs face challenges in minimizing layout area while maintaining effective programming and read operations, particularly in semiconductor integrated circuits, due to the complexity of anti-fuse structures and the need for separate well bias tap regions.
Innovation Solution
The proposed OTP cell design incorporates a p-type well region with first and second well bias tap regions doped with p-type dopants, which are grounded via contacts, and are in contact with sidewall spacers, allowing for a reduced layout area by integrating the well bias tap regions within the program region, thereby simplifying the structure and reducing the overall layout requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate well bias tap regions are used for each OTP cell, then programming and read operations are effective, but layout area increases
Solution Approach 1:
The patent merges the well bias tap regions with the program region by integrating them into the same structural footprint. The well bias tap regions are formed within the program region area, eliminating the need for separate dedicated tap regions for each OTP cell, thus reducing overall layout area while maintaining functional effectiveness
Solution Approach 2:
The program region is designed to serve multiple functions: it acts as both the programming region for the anti-fuse and simultaneously functions as the well bias tap region. This multi-functional design allows the same structural area to provide both programming capability and well biasing, reducing the total layout area required
2Area of stationary object
If well bias tap regions are integrated within the program region, then layout area is reduced, but structural complexity increases
Solution Approach 1:
The well bias tap region is segmented into first and second well bias tap regions that are spatially separated and positioned at different locations within the program region. This segmentation allows independent formation and grounding of each tap region while maintaining the integrated design, simplifying the manufacturing process and reducing structural complexity
Solution Approach 2:
The well bias tap regions are positioned in the vertical dimension below the gate insulating film and gate electrode, utilizing the depth of the well region. This three-dimensional arrangement allows the tap regions to be integrated within the program region's footprint without increasing planar layout area, while maintaining clear functional separation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables the manufacturing of OTP cells within a smaller layout area, reducing the overall layout of the OTP cell array and enhancing the efficiency of programming and read operations by eliminating the need for separate well bias taps for each OTP cell, thus optimizing semiconductor substrate utilization.
Implementation Method 1
the well bias tap region is doped with dopants of a same conductivity type as the well region
Implementation Method 2
a high dielectric field is applied to a dielectric material such as oxide to allow a tunneling current to flow through the dielectric material. The tunneling current flowing through the dielectric material causes a phenomenon referred to as 'dielectric breakdown.' If dielectric breakdown occurs, a conductive path through the dielectric material is formed
Data Source
AI summary
An anti-fuse device includes: a well region disposed in a semiconductor substrate; a gate electrode disposed on a gate insulating film on the semiconductor substrate; and a first well bias tap region disposed below the gate insulating film and the gate electrode in the well region, wherein the well bias tap region is doped with dopants of a same conductivity type as the well region.