OTP Memory Cell Diode Fuse Structure Integration
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Solution Overview
Problem
The existing One Time Programmable (OTP) memory technology has a large volume and low degree of integration due to the use of a gate-oxygen structure as a fuse circuit, which limits its application in various fields requiring high security and data integrity.
Innovation Solution
The implementation of a memory cell structure using two diodes in series, where the conductivity types of the active regions differ, replaces the gate-oxygen structure as a fuse path, reducing the volume of each memory cell and the overall OTP memory, thereby enhancing integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gate-oxygen structure is used as a fuse circuit in OTP memory, then the fuse function can be achieved, but the volume of each memory cell and the overall OTP memory becomes large, resulting in low integration density
Solution Approach 1:
The patent extracts the essential fuse function from the complex gate-oxygen structure and implements it using a simplified diode-based circuit. By removing unnecessary components and retaining only the critical breakdown functionality, the memory cell volume is reduced while maintaining the one-time programmable fuse function.
Solution Approach 2:
The patent changes the structural parameters of the fuse circuit by transitioning from a multi-component gate-oxygen structure to a compact diode configuration. This parameter change involves modifying the circuit topology and component arrangement to achieve smaller cell dimensions while preserving the electrical breakdown characteristic essential for OTP functionality.
2Reliability
If a gate-oxygen structure is used as a fuse circuit, then the fuse function is achieved, but the overall OTP memory volume increases, reducing integration density
Solution Approach 1:
The patent merges multiple functions into the diode-based structure, combining the fuse functionality, storage capability, and circuit integration into a single compact unit. This consolidation eliminates the need for separate gate and oxygen storage layers, reducing the overall memory volume while maintaining full OTP functionality.
Solution Approach 2:
The patent creates a simplified copy of the fuse function using diodes instead of the original gate-oxygen structure. This functional copy retains the essential breakdown characteristic needed for one-time programming but achieves it with significantly reduced material and spatial requirements, thereby decreasing total memory volume.
3Reliability
If a gate-oxygen structure is used, then fuse circuit functionality is provided, but the memory cell volume is large which limits application in high-security fields
Solution Approach 1:
The patent extracts the core data integrity function from the bulky gate-oxygen structure and implements it in a compact diode-based architecture. By isolating and implementing only the essential breakdown functionality needed for secure one-time programming, the invention achieves high reliability with reduced cell volume suitable for security applications.
Solution Approach 2:
The patent modifies the structural parameters of the memory cell by adopting a diode configuration with different dimensional characteristics compared to the gate-oxygen structure. This parameter change reduces the cell volume while maintaining the electrical properties necessary for ensuring data integrity in high-security applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces the volume of the OTP memory and improves its integration density, facilitating its application in fields requiring high security and data integrity, such as data-invariable keys, chip storage, and radio frequency identification.
Implementation Method 1
each of the plurality of the memory cells comprises a first diode and a second diode
Data Source
AI summary
A One Time Programmable (OTP) memory can have a memory cell, which includes two series diodes as a fuse structure.