OTP Gate Structure With L-Shaped High-k Dielectric for Faster Programming
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Solution Overview
Problem
Current one-time programmable (OTP) memory devices suffer from weak reading current and longer stress time under program mode, limiting their performance and efficiency.
Innovation Solution
The method involves forming a semiconductor device with a substrate having an OTP region, shallow trench isolation, a high-k dielectric layer with a first L-shape, and a gate structure including a gate electrode, which enhances the device's programming efficiency by integrating a high-k dielectric layer and optimizing the gate structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional OTP memory device structure is used, then fabrication cost is low and storage is easy, but reading current is weak and stress time is long
Solution Approach 1:
The patent changes the dielectric material parameter by introducing a high-k dielectric layer with dielectric constant greater than 4 (such as HfO2, HfSiO4, HfSiON, Al2O3, La2O3, Ta2O5, Y2O3, ZrO2) to replace conventional low-k dielectric materials. This parameter change increases the capacitance of the OTP capacitor, thereby strengthening the reading current and reducing the stress time required for programming operations.
Solution Approach 2:
The patent employs composite material structure by combining the high-k dielectric layer with the existing OTP capacitor structure (metal plate, insulation layer, semiconductor substrate). The high-k dielectric layer is integrated as a core component within this composite structure, creating a new OTP device architecture that maintains fabrication simplicity while achieving improved electrical performance.
2Productivity
If conventional gate structure is used, then device complexity is low, but programming efficiency is insufficient
Solution Approach 1:
The patent modifies the gate structure by introducing a high-k dielectric layer with specific dielectric constant (>4) between the gate electrode and the OTP capacitor. This parameter change in the dielectric material enables faster charge transfer and improved programming efficiency without requiring complex multi-layer gate structures or additional processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the programming efficiency and reduces stress time, addressing the limitations of existing OTP memory devices by leveraging a high-k dielectric layer and optimized gate structure.
Implementation Method 1
forming a first gate structure on the substrate and the STI. Preferably, the first gate structure includes a high-k dielectric layer on the substrate and a gate electrode on the high-k dielectric layer
Data Source
AI summary
A method for fabricating a semiconductor device includes the steps of first providing a substrate having an one time programmable (OTP) device region, forming a shallow trench isolation (STI) in the substrate, forming a first doped region adjacent to the STI, removing part of the STI, and then forming a first gate structure on the substrate and the STI. Preferably, the first gate structure includes a high-k dielectric layer on the substrate and a gate electrode on the high-k dielectric layer, in which the high-k dielectric layer comprises a first L-shape.