OTP Memory Read Circuit With Voltage Boosted Sensing Path
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Solution Overview
Problem
One-time programmable (OTP) memory read operations are hindered by the voltage mismatch between memory cells and sensing circuitry, leading to slower access times and limited reliability, especially at the operating limits of the memory array.
Innovation Solution
A voltage boost circuit is introduced to enhance the control signal voltage levels, allowing for improved saturation of switching devices and thus faster bit current conduction through the multiplexer, thereby improving read operation speed and reliability across the operating area of the OTP memory array.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If voltage levels are increased to improve read operation speed, then access time is reduced, but device complexity increases due to voltage boost circuit requirements
Solution Approach 1:
The voltage boost circuit is integrated within the existing memory block structure, nesting the voltage enhancement functionality inside the memory array rather than adding external circuitry. This allows voltage boosting to occur in-place during read operations without requiring separate voltage generation modules.
Solution Approach 2:
A dedicated voltage boost circuit acts as an intermediary component between the sensing circuitry and the memory cells. This intermediary circuit receives control signals and generates the necessary boosted voltages to drive bit current through the multiplexer, isolating the complexity from the main read path.
2Reliability
If voltage levels are increased to improve saturation of switching devices, then bit current conduction is improved, but power consumption increases
Solution Approach 1:
The voltage boost circuit operates periodically only during read operations rather than continuously. Control signals are applied in pulses to trigger voltage boosting only when needed for sensing, allowing the circuit to return to low-power states between read operations and minimizing overall power consumption.
Solution Approach 2:
The voltage boost circuit dynamically adjusts voltage levels based on operational requirements. During read operations, voltages are temporarily increased to ensure proper saturation and reliable sensing, then returned to normal operating levels afterward, optimizing the balance between reliability and power consumption.
Data Source
AI summary
Methods, apparatus, systems and articles of manufacture are disclosed to improve performance while reading a one-time programmable memory. An example apparatus includes: a voltage boost circuit including a first output, a second output, a first input configured to be coupled to a controller, a second input coupled to a first output of a decoder, a third input coupled to a second output of the decoder; and a multiplexer including a first input coupled to the first output of the voltage boost circuit, a second input coupled to the second output of the voltage boost circuit, a third input coupled to an array of memory, and an output coupled to a sensing circuit.