OTP Memory Sensing Circuit With Current Mirror Read Acceleration
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Solution Overview
Problem
The existing methods for reading one-time-programmable (OTP) memory cells are inefficient due to slow access and cycle times, which hinder the reliable utilization of memory bits by processors and computing systems.
Innovation Solution
The implementation of a current mirror in the sensing circuit to boost and replicate the bit current, allowing for a more efficient comparison with a reference current, thereby reducing access and cycle times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional sensing circuit methods are used to read OTP memory cells, then the memory can be read, but the access time and cycle time are excessively slow
Solution Approach 1:
A current mirror circuit is introduced as an intermediary component between the memory cell and the sensing logic. The current mirror replicates and amplifies the small bit current from the memory cell, creating a larger current that can be more efficiently sensed and processed by the logic circuitry, thereby reducing access time and improving reading efficiency
Solution Approach 2:
The patent changes the current parameter by using a current mirror to replicate the bit current multiple times (e.g., 4x or 8x amplification). This parameter transformation converts a small, slow-to-sense current into a larger, faster-to-detect current, directly addressing the slow access time problem without fundamentally changing the memory cell structure
2Speed
If conventional sensing circuit methods are used to read OTP memory cells, then the memory can be read, but the cycle time is excessively slow
Solution Approach 1:
The current mirror serves as a time-compression intermediary by rapidly replicating the bit current at the beginning of the read cycle. This allows the sensing logic to quickly determine the memory cell state, significantly reducing the cycle time and the time loss before memory bits can be reliably utilized by processors
Solution Approach 2:
The current mirror performs preliminary current amplification before the main sensing and processing operations. By preparing a larger, more easily detectable current signal in advance, the system reduces the overall time required for the complete read cycle, enabling faster utilization of memory data
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves the access and cycle times for reading OTP memory cells, enabling more efficient operation of OTP memory regardless of the presence of shadow volatile memory.
Implementation Method 1
The current mirror 218 is coupled to the multiplexor 206 to obtain a bit current and replicate the bit current
Data Source
AI summary
Methods, apparatus, systems and articles of manufacture are disclosed that improve performance while reading memory. The method includes initializing an output of a of a sensing circuit to be a first logic high value, obtaining, from the memory, a first current corresponding to a memory bit stored in the memory, replicating the first current, determining whether the replicated first current is greater than a second current, and in response to determining that the replicated first current is greater than the second current, generating a second logic high value at the output of the sensing circuit.