One Time Programming Memory Multilevel Storage Diode
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Solution Overview
Problem
Current one time programming memories using cross-array structures can only achieve binary storage, lacking multilevel storage capabilities despite their high storage density and low power consumption.
Innovation Solution
A one time programming memory is developed by connecting a variable-resistance memory with bipolar conversion characteristics in series with a diode having a unidirectional conducting rectification characteristic, allowing for multilevel storage through different programming voltages or currents, and inhibiting read crosstalk with the diode's rectification function.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a cross-array structure with dielectric puncture programming is used, then storage density is improved, but multilevel storage capability deteriorates (only binary storage is achieved)
Solution Approach 1:
The patent changes the programming parameter from binary (punctured/not punctured) to multilevel by applying different magnitudes of programming current. The variable-resistance memory element can be programmed to different resistance states (first state, second state, third state) by controlling the current magnitude, enabling multilevel storage while maintaining the cross-array structure's high density
Solution Approach 2:
The patent uses a composite structure combining a diode and a variable-resistance memory element. The diode provides rectification functionality to enable unidirectional programming, while the variable-resistance memory element provides multilevel storage capability. This composite approach allows both binary programming control and multilevel storage states to coexist
2Quantity of substance
If multilevel storage is implemented in one time programming memory, then storage density is improved, but programming control complexity increases
Solution Approach 1:
The patent applies partial programming action by using different current magnitudes to program only the desired number of fuse links. By controlling the programming current magnitude, the system can program exactly the required number of elements to achieve the desired storage state, avoiding excessive programming that would complicate control
Solution Approach 2:
The diode acts as an intermediary component that simplifies the programming control. Its rectification characteristic allows programming current to flow in only one direction, automatically preventing unintended programming of adjacent cells and simplifying the overall programming control mechanism
3Ease of operation
If a diode is added to enable one time programming and multilevel storage, then programming control is improved, but device structure complexity increases
Solution Approach 1:
The diode serves multiple functions simultaneously: it provides rectification for one-time programming control, enables unidirectional current flow to prevent crosstalk, and works with the variable-resistance memory element to achieve multilevel storage. This multi-functionality reduces the need for additional separate components
Solution Approach 2:
The patent merges the diode and variable-resistance memory element into a single integrated memory cell structure. This combination allows the rectification function and storage function to work together in a unified structure, reducing overall device complexity compared to separate implementations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances storage density and reduces costs by enabling multilevel storage in a single programming step, while preventing misreading due to the diode's rectification function in the low resistance state.
Implementation Method 1
a diode having a unidirectional conducting rectification characteristic
Implementation Method 2
a variable-resistance memory having a bipolar conversion characteristic
Data Source
AI summary
One time programming memory and methods of storage and manufacture of the same are provided. Examples relate to microelectronic memory technology and manufacture. The one time programming memory includes a diode (10) having a unidirectional conducting rectification characteristic and a variable-resistance memory (20) having a bipolar conversion characteristic. The diode (10) having the unidirectional conducting rectification characteristic and the variable-resistance memory (20) having the bipolar conversion characteristic are connected in series. The one time programming memory device of this example takes the bipolar variable-resistance memory (20) as a storage unit, programming the bipolar variable-resistance memory (20) into different resistance states so as to carry out multilevel storage, and takes the unidirectional conducting rectification diode (10) as a gating unit. The rectification characteristic of unidirectional conducting rectification diode (10) can not only enable the bipolar variable-resistance storage (20) to be programmed only once but also inhibit crosstalk in a cross-array structure.