OTS Device Manufacturing Using Single Ar Gas Etching
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Solution Overview
Problem
The chalcogenide material used in OTS devices degrades due to air exposure, leading to unstable characteristics, and conventional etching methods require multiple gas treatments, making it difficult to achieve a stable OTS device configuration.
Innovation Solution
A method involving forming a first conductor, an OTS portion made of chalcogenide, and a second conductor on an insulating substrate, with a series of steps including in-situ processes under reduced pressure, followed by a single etching treatment using Ar gas to remove all layers simultaneously, ensuring flat surfaces and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chalcogenide material is used for OTS device, then excellent electric characteristics are achieved, but the threshold voltage becomes degraded due to air exposure and characteristics become unstable
Solution Approach 1:
The patent applies inert atmosphere by performing all film formation processes (forming the first conductor, OTS portion made of chalcogenide, and second conductor) in a reduced pressure environment without air exposure. This prevents oxidation and degradation of the chalcogenide material, maintaining stable threshold voltage and device characteristics throughout the manufacturing process.
2Manufacturing precision
If chemical reaction etching using various gases multiple times is performed, then the layered body configuration is formed, but the manufacturing process becomes complex and time-consuming
Solution Approach 1:
The patent merges multiple etching steps into a single dry etching process using Ar gas. Instead of performing chemical reaction etching with different gases multiple times to selectively remove materials, the invention uses one unified dry etching step that simultaneously handles the etching of the layered body configuration, significantly simplifying the manufacturing process while maintaining precision.
Solution Approach 2:
The dry etching process using Ar gas serves multiple functions: it removes the resist pattern, defines the electrode portions, and creates the necessary layered body configuration all in one step. This multi-functional approach eliminates the need for multiple specialized etching steps with different gases.
3Manufacturing precision
If multiple etching treatments with various gases are performed, then the electrode portions are formed, but the manufacturing time and process steps increase
Solution Approach 1:
The patent combines multiple etching operations into a single dry etching step using Ar gas. This unified process simultaneously forms the electrode portions and creates the layered body structure, reducing the number of process steps and improving manufacturing efficiency while maintaining the required precision for electrode formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process, achieves stable OTS device characteristics by ensuring flat surfaces and reducing field concentration, and is effective for crossbar-type memory applications like ReRAM and CBRAM.
Implementation Method 1
step E of dry etching a region which is not coated with the resist... the second conductor, all of the OTS portion, and an upper portion of the first conductor are removed by an etching treatment at one time (once) using Ar gas
Implementation Method 2
step F of ashing the resist
Data Source
AI summary
A method of manufacturing an OTS device of the invention is a method of manufacturing OTS device including a first conductor, an OTS portion made of chalcogenide, and a second conductor which are layered in order and disposed on an insulating substrate. The manufacturing method includes: a step D of forming a resist so as to coat part of an upper surface of the second conductor; a step E of dry etching a region which is not coated with the resist; and a step F of ashing the resist. In the step E, the second conductor, all of the OTS portion, and an upper portion of the first conductor are removed by an etching treatment once in a depth direction of the region.