Output Circuit Voltage Distribution via Segmented Transistors
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Solution Overview
Problem
Existing high-voltage output circuits using low-withstand voltage transistors suffer from reliability issues due to rising low-level output signal levels and unwanted current between power supply and ground, making them unsuitable for high-speed operations.
Innovation Solution
The implementation of a circuit configuration using first and second p-type transistors connected in series between a second power supply and an output terminal, along with n-type transistors and diodes, allows for independent control of gate signals to optimize transistor operations, preventing low-level signal rises and unwanted currents, thereby enhancing reliability and drive capability for high-speed operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional configurations (cascoding transistors or inserting multiple diodes) are used to distribute voltage in high-voltage output circuits, then high-voltage output capability is achieved, but reliability deteriorates due to rise in low-level output signal and unwanted current between power supply and ground
Solution Approach 1:
The patent divides the voltage distribution function into multiple segments: diodes for voltage dropping, transistors for active control, and capacitors for voltage stabilization. This segmentation allows each component to perform its optimized function, preventing the low-level signal rise and unwanted current issues while maintaining high-voltage output capability without excessive complexity
Solution Approach 2:
The patent introduces intermediate voltage nodes and control circuits that act as mediators between the power supply and output. These intermediaries (such as the third transistor gate control circuit and intermediate capacitors) prevent direct harmful voltage application to low-withstand voltage transistors while maintaining circuit reliability
2Productivity
If low-withstand voltage transistors are used in high-voltage output circuits, then circuit integration is improved, but drive capability deteriorates making the circuit unsuitable for high-speed operation
Solution Approach 1:
The patent changes the voltage parameters applied to different transistor gates dynamically. By controlling gate voltages to match the specific withstand voltage characteristics of low-withstand voltage transistors while maintaining high output voltage capability, the circuit achieves both high-speed operation and reliable transistor operation within voltage margins
3Reliability
If multiple stages of diodes are inserted to distribute voltage, then voltage distribution capability is improved, but device complexity and unwanted current increase
Solution Approach 1:
The patent merges the voltage distribution function with transistor gate control functions. Instead of using separate multi-stage diode circuits, the diodes are integrated with transistor gates, allowing voltage distribution and active control to work together, reducing the total number of components while maintaining voltage distribution accuracy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures a highly reliable output circuit capable of high-speed operations by avoiding low-level signal rises and unwanted currents, effectively utilizing low-withstand voltage transistors.
Implementation Method 1
a first diode including one diode or a plurality of serially connected diodes, connected between the drain of the third p-type transistor and a drain of the first n-type transistor
Data Source
AI summary
An output circuit outputs an output signal having an amplitude VCCH responsive to an input signal having an amplitude VCCL. The output circuit includes: first and second p-type transistors connected in series between VCCH and an output terminal; a first n-type transistor grounded at its source and receiving a first signal at its gate; a third p-type transistor connected to VCCH at its source, connected to the gate of the first p-type transistor at its drain, and receiving a second signal at its gate; and a first diode connected between the drains of the first n-type transistor and the third p-type transistor.