Output Driver Timing to Prevent Switching Current Damage

The patent applies preliminary action by controlling the turning-off sequence of transistors. Specifically, the first transistor (P-type or N-type) is turned off before the second transistor, creating a time gap that prevents simultaneous conduction. This preliminary sequencing of switching actions eliminates the large current spike that would otherwise occur during state transitions, protecting output copper lines and bonding from damage while maintaining reliable switching function.

The patent applies local quality by differentiating the gate oxide layer thickness based on specific transistor requirements. Transistors that need to handle high voltages (such as those connected to high voltage power sources) are equipped with thick gate oxide layers for reliable voltage handling, while transistors operating at lower voltages use thinner gate oxide layers to minimize area occupation. This localized optimization allows the circuit to achieve necessary voltage handling capability without unnecessarily increasing overall circuit area.