Overdriven switch

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Solution Overview

Problem

Current data processing technologies face challenges in achieving low power consumption during data transfer within or between integrated circuit devices, particularly due to high thermal transfer and power dissipation associated with signal generation and switching operations.

Innovation Solution

The implementation of a remotely-controlled cryogenic switch in a superconducting temperature domain, utilizing metal-oxide semiconductor (MOS) devices connected directly to data and control signal interconnects, enables data transfer between warmer and colder temperature domains with reduced power dissipation by leveraging negligible leakage and low threshold voltage of MOS devices at superconducting temperatures, and by generating high-swing configuration control signals remotely to minimize heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If traditional switching operations are used within warmer temperature domains, then data transfer can be achieved, but power dissipation and thermal transfer are high

Engineering Contradiction:
Improvepower dissipationVSAvoiddata transfer efficiency
Core Design Contradiction:
Use of energy by moving objectVSProductivity

Solution Approach 1:

The patent changes the operating temperature parameter from warm (traditional) to cryogenic (superconducting) domain. MOS devices are operated at cryogenic temperatures where they exhibit negligible leakage current and low threshold voltage, fundamentally changing their electrical characteristics to achieve ultra-low power dissipation while maintaining switching functionality for data transfer

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces a cryogenic switch as an intermediary component between warm-domain data sources/destinations. The switch is controlled by high-swing signals generated remotely in the warm domain, allowing data transfer across temperature domains while minimizing heat dissipation at the cryogenic interface

Inventive Principle:
Principle #24Intermediary (Mediator)

2Loss of energy

If MOS devices are operated at superconducting temperatures, then leakage current is negligible and threshold voltage is low, but device control complexity increases

Engineering Contradiction:
Improveleakage currentVSAvoidcontrol signal requirements
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent extracts the high-swing signal generation function from the cryogenic domain and places it in the warm domain. Only the essential switching function remains at cryogenic temperatures, controlled by simplified low-swing signals, reducing the complexity of cryogenic device control while maintaining the energy-saving benefits

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The control system is segmented into two domains: warm-domain high-swing signal generators and cryogenic-domain low-swing signal switches. This segmentation allows each domain to operate optimally - warm domain handles complex signal generation, while cryogenic domain handles simple switching with minimal control requirements

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces power dissipation and cooling requirements, enabling efficient data transfer with dramatically lower power consumption compared to traditional switching operations within warmer temperature domains.

Implementation Method 1

designed for operation within a superconducting cryogenic environment (e.g., below approximately 10 Kelvin)

Methodology Applied
Scientific EffectSuperconductivity: Superconductivity

Implementation Method 2

leveraging negligible leakage and exceedingly low threshold voltage of MOS devices at superconducting temperature

Methodology Applied
Scientific EffectCryogenic temperature effect on MOS devices:

Data Source

PatentUS11811397B1Overdriven switch
Publication Date: 2023.11.07 RAMBUS INC
  • US11811397B1 patent drawing
  • US11811397B1 patent drawing
  • US11811397B1 patent drawing

AI summary

An signal switching integrated-circuit die includes an array of switch cells, control signal contacts, data input contacts and data output contacts. Switch control signals are received from an external control-signal source via respective control signal contacts, inbound data signals are received from one or more external data-signal sources via respective data input contacts and outbound data signals are conveyed to one or more external data-signal destinations via respective data output contacts. The array of switch cells receives the control signals directly from the control signal contacts and response to the control signals by switchably interconnecting the data input contacts with selected ones of the data output contacts.