Overlapped Metal Driving Substrate for Stronger Adhesive Bonding

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Solution Overview

Problem

The adhesion of adhesive materials used to bond driving substrates in electronic devices is inadequate, leading to a risk of peeling, which needs to be improved.

Innovation Solution

A driving substrate design with a thin film transistor divided into multiple active blocks, featuring overlapping metal layers and semiconductor layers, with strategically placed gaps and bridges to enhance adhesive material coverage and reduce the risk of peeling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If adhesive material is used to bond driving substrates, then bonding between substrates is achieved, but adhesion is inadequate leading to peeling risk

Engineering Contradiction:
Improveadhesion strengthVSAvoidpeeling risk
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a third dimension (vertical stacking) by forming metal layers and semiconductor structures that overlap in the vertical direction. This increases the bonding interface area between substrates, transforming a 2D adhesive bonding problem into a 3D structural solution, thereby improving adhesion strength and reducing peeling risk

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs multiple material layers including metal layers (first and second metal layers), semiconductor layers, and adhesive materials in a composite structure. This composite approach combines the adhesive properties of adhesive materials with the structural integrity of metal and semiconductor layers, creating a multi-functional bonding system that enhances overall adhesion

Inventive Principle:
Principle #40Composite materials

2Area of stationary object

If driving substrate is bonded using conventional adhesive materials, then substrate bonding is achieved, but adhesive coverage area is insufficient

Engineering Contradiction:
Improveadhesive material coverage areaVSAvoidbonding strength
Core Design Contradiction:
Area of stationary objectVSStrength

Solution Approach 1:

The patent utilizes vertical stacking of metal layers and semiconductor structures to create overlapping regions that extend the adhesive coverage area. By arranging structures in multiple layers (first metal layer, second metal layer, semiconductor layer) with horizontal and vertical offsets, the effective bonding area is increased without expanding the horizontal footprint

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent divides the bonding structure into multiple discrete layers (first metal layer with first and second portions, second metal layer, semiconductor layer) that can be independently positioned and bonded. This segmentation allows for optimized adhesive placement in the gaps between layers, maximizing coverage area while maintaining structural integrity

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20260047206A1Driving substrate with overlapped metal layers and semiconductor layer
Publication Date: 2026.02.12 INNOLUX CORP
  • US20260047206A1 patent drawing
  • US20260047206A1 patent drawing
  • US20260047206A1 patent drawing

AI summary

A driving substrate is provided. The driving substrate includes a substrate and a first metal layer disposed thereon. The first metal layer has a first portion, a second portion, and a third portion, in a top view, the first portion and the second portion are arranged along a first direction, and the third portion extends along the first direction and is connected between the first portion and the second portion. In a second direction perpendicular to the first direction, a width of the third portion is less than both a width of the first portion and a width of the second portion. The driving substrate includes a second metal layer disposed on the substrate and overlapped with the first portion and the second portion; and a semiconductor disposed on the substrate. The first metal layer, the second metal layer, and the semiconductor are overlapped with each other.