Overlapping Contact Structure in 3D Memory Pillars
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Solution Overview
Problem
Existing semiconductor storage devices face challenges in efficiently manufacturing stacked conductive layers and semiconductor memory pillars that form memory cells at the intersections, leading to structural complexity and potential performance limitations.
Innovation Solution
A semiconductor storage device design featuring overlapping insulating layers and contacts that extend through conductive layers, with specific configurations such as flower-like and cylindrical shapes, allowing for improved connectivity and manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing methods are used for stacked conductive layers and semiconductor memory pillars, then the manufacturing process is simpler, but the structural complexity increases and performance is limited
Solution Approach 1:
The patent implements nesting by placing the first contact inside the second contact, forming a nested configuration where the first contact is surrounded by the second contact. This nested structure allows multiple connections to be integrated in a compact arrangement, reducing overall device complexity while improving memory cell performance and reliability.
Solution Approach 2:
The patent transitions from planar contact arrangements to a vertical stacked configuration where contacts are arranged in multiple layers along the vertical dimension. The first and second contacts are positioned at different vertical levels, with the first contact extending through the first conductive layer and the second contact extending through the second conductive layer, utilizing the third dimension to reduce lateral complexity.
2Ease of manufacture
If overlapping contacts and insulating layers are implemented, then manufacturing feasibility is enhanced, but the device structure becomes more complex
Solution Approach 1:
The patent applies preliminary action by forming the first contact and its surrounding first insulating layer before forming the second contact and second insulating layer. This sequential formation approach allows each contact-insulating layer pair to be manufactured using standard processes, enhancing manufacturing feasibility while the overlapping arrangement manages the resulting structural complexity.
Solution Approach 2:
The insulating layers serve as intermediaries between the overlapping contacts. The first insulating layer surrounds the first contact, and the second insulating layer surrounds the second contact, providing electrical isolation and structural support. These intermediary insulating layers enable the complex overlapping contact structure to be manufactured using conventional processes.
3Reliability
If contacts extend through multiple conductive layers with overlapping configurations, then electrical connections are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the contact structure into distinct first and second contacts, each extending through specific conductive layers. The first contact is segmented to extend through the first conductive layer, while the second contact is segmented to extend through the second conductive layer. This segmentation allows each contact to be formed with appropriate precision for its specific function, improving overall electrical connections while managing manufacturing precision requirements.
Data Source
AI summary
A semiconductor storage device includes a semiconductor substrate and a conductive layer separated from the semiconductor substrate in a first direction. The conductive layer extends in a second direction parallel to the semiconductor substrate. A semiconductor layer extends in the first direction through the conductive layer. A first contact extends in the first direction and is connected to a surface of the conductive layer facing away from the semiconductor substrate. A first insulating layer extends in the first direction, and a second insulating layer extends along the first insulating layer in the first direction. Each of the first and second insulating layers entirely overlaps with the first contact when viewed in the first direction.