Overlapping Terminal Electrode Layout for Larger Semiconductor Active Regions

The patent transitions from planar electrode arrangements to a three-dimensional overlapping configuration where terminal electrodes extend vertically to overlap with underlying electrodes in different layers. This dimensional change enables multiple electrical connection paths simultaneously, improving connectivity and reducing resistance without complicating the manufacturing process, as the overlapping structure can be formed through sequential deposition and etching steps.

The patent implements a nested electrode structure where terminal electrodes are positioned to overlap with and extend from underlying electrodes, creating a nested configuration. This nesting allows multiple electrodes to occupy overlapping spatial regions, maintaining close electrical coupling for low resistance while the vertical separation and insulation layers prevent signal interference, thus resolving the contradiction between spacing and resistance.

The patent employs preliminary action by forming insulating layers and defining electrode patterns before depositing terminal electrodes. The insulating layers are pre-formed with precise thickness and positioning, creating predetermined alignment references that guide subsequent electrode deposition. This preliminary structuring ensures that terminal electrodes overlap correctly with underlying electrodes without requiring extremely high precision during the overlapping deposition step itself.