Overlapping Well Regions for Semiconductor Device Structure
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor device structures as feature sizes continue to decrease, leading to increased complexity and difficulty in manufacturing due to the scaling-down process.
Innovation Solution
A semiconductor device structure is formed by creating a substrate with overlapping conductive type well regions, where the first conductive type well region partially overlaps the second conductive type well region, and a gate structure is positioned over the overlapping region, along with specific doping concentrations and isolation structures to improve breakdown voltage and channel length.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency increases and costs decrease, but manufacturing complexity and difficulty increase
Solution Approach 1:
The patent segments the semiconductor device structure into distinct well regions with different conductive types (first conductive type well region and second conductive type well region) that are partially overlapping. This segmentation allows for independent optimization of each region's properties while maintaining overall device functionality, thereby managing manufacturing complexity at smaller feature sizes
Solution Approach 2:
The patent applies local quality by creating regions with different doping concentrations within the well structures. Specifically, the first well region has a first doping concentration and the second well region has a second doping concentration, allowing localized optimization of electrical properties in different areas of the device to maintain performance as feature sizes decrease
2Quantity of substance
If feature sizes continue to decrease to increase functional density, then more devices fit per chip area, but fabrication processes become more difficult to perform reliably
Solution Approach 1:
The patent forms the first and second well regions with different conductive types and doping concentrations before forming the transistor channels. This preliminary action establishes the electrical characteristics and depletion region boundaries in advance, providing a stable foundation for subsequent processing steps and improving fabrication reliability at smaller feature sizes
Solution Approach 2:
The patent introduces isolation structures as intermediaries between adjacent well regions and devices. These isolation structures prevent unwanted electrical interactions and provide physical separation, enabling higher device density while maintaining reliable fabrication and device operation
Data Source
AI summary
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate, a first conductive type well region in the substrate, and a second conductive type well region in the substrate. The first conductive type is different from the second conductive type. The first conductive type well region partially overlaps the second conductive type well region in an overlapping region. The semiconductor device structure also includes a source portion in the first conductive type well region and a drain portion in the second conductive type well region. The semiconductor device structure further includes a gate structure over the substrate and the overlapping region, and between the source portion and the drain portion. The semiconductor device structure further includes a first conductive type doping region in the first conductive type well region and the overlapping region.