Semiconductor Oxidation Nozzle Array for Film Uniformity
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Solution Overview
Problem
Conventional oxidation methods for semiconductor processes face challenges in achieving uniformity and optimizing film thickness of oxide films, particularly as design rules for semiconductor devices become stricter, leading to inadequate planar uniformity and increased complexity in adjusting gas flow rates for varying wafer surface areas.
Innovation Solution
An oxidation apparatus and method that includes a process container with a vertically arranged oxidizing gas nozzle and multiple deoxidizing gas nozzles of varying heights, allowing for controlled and uniform distribution of O2 and H2 gases to generate oxygen radicals and hydroxyl group radicals, which oxidize the wafer surface, simplifying the adjustment of gas flow rates and improving inter-substrate uniformity of film thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wet oxidation is performed under normal pressure to achieve high oxidation rate, then productivity is improved, but manufacturing precision of film thickness uniformity deteriorates
Solution Approach 1:
The process container is divided into multiple zones (first zone, second zone, third zone) along the gas flow direction, with each zone having independently controllable deoxidizing gas supply. This segmentation allows different regions to be optimized for different functions: the first zone generates radicals, the second zone maintains uniformity, and the third zone ensures complete reaction, thereby achieving both high oxidation rate and uniform film thickness.
Solution Approach 2:
Different deoxidizing gas flow rates are supplied to different zones based on their specific requirements. The first zone receives a higher flow rate to generate sufficient radicals, while subsequent zones receive adjusted flow rates to maintain uniformity and complete reactions. This local optimization of gas supply parameters enables simultaneous achievement of high productivity and manufacturing precision.
2Manufacturing precision
If conventional oxidation methods are used to meet stricter design rules, then manufacturing precision is improved, but device complexity of gas flow adjustment increases
Solution Approach 1:
The oxidation process is divided into distinct zones with specific functions: radical generation, uniformity maintenance, and reaction completion. Each zone has dedicated deoxidizing gas supply circuits with independent flow rate control, simplifying the overall adjustment process by providing a structured approach rather than requiring complex global optimization of a single gas supply system.
Solution Approach 2:
The system uses multiple deoxidizing gas supply circuits with independently adjustable flow rates to control the oxidation process in different zones. By changing flow rate parameters in each zone according to specific requirements, the system achieves uniform film thickness while maintaining manageable complexity through localized parameter control rather than global adjustment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution simplifies the adjustment of gas flow rates and significantly improves the inter-substrate uniformity of silicon oxide film thickness, reducing the complexity of obtaining optimized process conditions and achieving better planar uniformity compared to conventional methods.
Implementation Method 1
H2 gas and O2 gas are caused to react with each other under a low pressure of about 1 Torr and a relatively low temperature of, e.g., lower than 900° C. to generate oxygen radicals and hydroxyl group radicals
Implementation Method 2
These radicals are used to oxidize a wafer surface, so as to form, e.g., a silicon oxide film
Data Source
AI summary
An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a reaction between the oxidizing gas and the deoxidizing gas. The oxidizing gas is supplied through an oxidizing gas nozzle extending over a vertical length corresponding to the process field and is spouted from a plurality of gas spouting holes formed on the oxidizing gas nozzle and arrayed over the vertical length corresponding to the process field. The deoxidizing gas is supplied through a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically and is spouted from gas spouting holes respectively formed on the deoxidizing gas nozzles each at height of a corresponding zone.