Oxidation-Promoting Agent for Low-Temperature Silicon Oxide
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Solution Overview
Problem
High-temperature processes for forming high-quality silicon oxide layers in semiconductor device fabrication can adversely affect other device characteristics, and existing methods do not efficiently produce dense and high-quality silicon oxide layers at lower temperatures.
Innovation Solution
A method involving the formation of an oxidation-promoting agent layer on a semiconductor substrate, followed by a spin-on-glass material layer, which is then soft-baked and annealed in an oxidizing atmosphere to form a high-quality silicon oxide layer, utilizing an oxidation-promoting composition with a specific agent structure (A-M-L) that allows for chemisorption and thermal decomposition to enhance oxidation and densification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high temperature processes are used to form high-quality silicon oxide layers, then the quality and density of the oxide layer is improved, but other device characteristics are adversely affected
Solution Approach 1:
The patent introduces an oxidation-promoting agent as an intermediary substance that facilitates oxide layer formation at lower temperatures. The agent comprises specific chemical compounds (e.g., organic peroxides, carboxylic acids) that mediate the oxidation process, enabling high-quality oxide layer formation without requiring high temperatures that would adversely affect device characteristics
Solution Approach 2:
The patent changes the chemical parameters of the oxidation process by introducing specific oxidation-promoting agents with controlled concentrations (e.g., 0.1-10% by weight). This allows the oxidation reaction to proceed efficiently at lower temperatures, transforming the process parameters from high-temperature thermal oxidation to controlled chemical oxidation
2Temperature
If conventional methods are used to form silicon oxide layers, then the process is simple, but dense and high-quality oxide layers cannot be efficiently produced at lower temperatures
Solution Approach 1:
The oxidation-promoting agent acts as a mediator that enables low-temperature oxidation. Specific compounds such as hydrogen peroxide, organic peroxides, and carboxylic acids facilitate the oxidation reaction at reduced temperatures while maintaining oxide layer density and quality that would otherwise require high temperatures
Solution Approach 2:
The patent employs strong oxidizing agents (e.g., hydrogen peroxide, organic peroxides, nitric acid) that accelerate the oxidation process, allowing dense oxide layers to form at lower temperatures. These strong oxidants provide the necessary oxidative power without requiring thermal energy that would increase processing temperature
3Reliability
If high temperature annealing is performed to improve oxide layer quality, then the oxide layer density increases, but the process complexity and energy consumption increase
Solution Approach 1:
The patent changes the energy parameters of the process by introducing chemical energy carriers (oxidation-promoting agents) that release oxidation capacity at lower temperatures. This transforms the energy input from high-temperature thermal energy to lower-temperature chemical energy, reducing overall energy consumption while maintaining oxide layer quality
Solution Approach 2:
Strong oxidizing agents provide accelerated oxidation that achieves high oxide layer quality without prolonged high-temperature annealing. The chemical oxidation process is more energy-efficient than thermal oxidation, reducing energy consumption while improving oxide layer reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of dense and high-quality silicon oxide layers at lower temperatures, improving device characteristics and reducing the need for high-temperature processing, with increased conversion rates and reduced thickness variability.
Implementation Method 1
forming a monolayer including an oxidation-promoting agent on a surface of a semiconductor substrate
Implementation Method 2
annealing the oxidation-promoting agent layer and the spin-on-glass material layer to form the oxide layer
Implementation Method 3
annealing is performed in an oxidizing atmosphere
Data Source
AI summary
Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.