Oxide ALD Deposition with H2 Co-Flow for Higher Throughput
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Solution Overview
Problem
Current atomic-layer deposition (ALD) processes face challenges in increasing deposition rates without compromising film properties, particularly in semiconductor substrate processing, where trade-offs often result in adverse effects on throughput.
Innovation Solution
The method involves introducing a hydrogen (H2) gas as a co-flow during specific steps of the ALD process, such as during precursor introduction, evacuation, RF conversion, and plasma-species RF purge, to enhance the deposition rate of ALD-produced films, specifically oxide and silicon dioxide films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional precursor-purge-oxidation-purge sequence is used, then film properties are maintained, but deposition rate is limited
Solution Approach 1:
Hydrogen gas is introduced as an intermediary substance during the RF conversion step to facilitate faster oxide film deposition. The hydrogen acts as a mediator that enables higher deposition rates without compromising film quality by modifying the chemical environment during the oxidation process
Solution Approach 2:
The invention changes the chemical composition parameter of the deposition environment by introducing hydrogen gas during specific steps of the ALD process. This parameter change enables the deposition rate to increase by 10-15% while maintaining film properties through controlled modification of the reaction conditions
2Productivity
If deposition rate is increased through process modification, then throughput improves, but film properties deteriorate
Solution Approach 1:
Hydrogen gas is introduced periodically during specific steps (precursor introduction, evacuation, RF conversion, and plasma-species RF purge) rather than continuously. This periodic action allows the system to achieve higher throughput while maintaining film reliability by controlling when the hydrogen-enhanced deposition occurs in the cyclic ALD process
3Productivity
If hydrogen gas is introduced during multiple ALD steps, then deposition rate increases by 10-15%, but process complexity increases
Solution Approach 1:
The ALD process is segmented into distinct steps (precursor introduction, evacuation, RF conversion, plasma-species RF purge), and hydrogen gas is selectively introduced during specific segments. This segmentation allows the process to achieve higher deposition rates while managing complexity by applying hydrogen enhancement only where beneficial rather than throughout the entire process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the deposition rate by 10% to 15% without degrading film properties, improves wet-etch rate ratios, and allows for better step coverage control, making it suitable for both low and high aspect-ratio features in semiconductor applications.
Implementation Method 1
introducing a precursor gas into the deposition chamber; evacuating at least a portion of remaining precursor-gas molecules from the deposition chamber; applying a radio-frequency (RF) conversion to the substrate in the deposition chamber; performing a plasma-species RF purge; and introducing a hydrogen (H2) gas into the deposition chamber
Implementation Method 2
applying a radio-frequency (RF) conversion to the substrate in the deposition chamber
Implementation Method 3
performing a plasma-species RF purge
Data Source
AI summary
Various embodiments include a method for increasing a deposition rate of, for example, an atomic-layer deposition (ALD)-produced film onto a surface of a substrate. In one exemplary embodiment, the method includes placing the substrate in a deposition chamber, introducing a precursor gas into the deposition chamber, evacuating at least a portion of remaining precursor-gas molecules from the deposition chamber, applying a radio-frequency (RF) conversion to the substrate in the deposition chamber, performing a plasma-species RF purge, and introducing a hydrogen (Fh) gas into the deposition chamber during one or more of the operations including introducing the precursor gas into the deposition chamber, evacuating at least the portion of remaining precursor-gas molecules from the deposition chamber, applying the RF conversion step to the substrate in the deposition chamber, and performing the plasma-species RF purge. Other methods are disclosed.