Oxide Semiconductor Active Layer Anode Positioning for Stable Threshold Voltage
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Solution Overview
Problem
The use of oxide semiconductors with zinc oxide as the active layer in organic light emitting displays faces challenges due to significant variations in electric characteristics, leading to unstable threshold voltage across pixels, affecting picture quality and reliability.
Innovation Solution
The implementation of a specific structure for an organic light emitting display that includes a substrate with a gate electrode, insulating layers, and an oxide semiconductor active layer, where the anode electrode is positioned to not overlap the active layer, and an organic light emitting layer is formed on the exposed anode electrode, ensuring stable electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If oxide semiconductor is used as the active layer to simplify manufacturing process, then manufacturing complexity is reduced, but electric characteristic stability deteriorates
Solution Approach 1:
The patent applies local quality by creating different structural configurations for the anode electrode in different regions. Specifically, the anode electrode is positioned to overlap the active layer in non-emission regions while being separated in emission regions. This localized structural differentiation stabilizes the threshold voltage in emission regions while maintaining the simplified oxide semiconductor manufacturing process overall.
Solution Approach 2:
The patent introduces a spatial dimensional solution by controlling the vertical and horizontal positioning of the anode electrode relative to the active layer. By adjusting the overlap configuration in the vertical dimension and positioning in the horizontal dimension, the patent achieves stable electric characteristics without changing the oxide semiconductor material itself, thus maintaining manufacturing simplicity.
Data Source
AI summary
An organic light emitting display is disclosed. The display comprises a transistor with an active layer comprising an oxide semiconductor material. The oxide semiconductor material has conductivity suitable for the transistor because of a diffusion path allowing hydrogen to escape from the active layer.