Oxide-to-Oxide Bonding for Multi-Level Semiconductor Devices
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Solution Overview
Problem
Current methods for constructing RGB LEDs, image sensors, displays, and solar cells face challenges such as high costs, inefficiencies, and thermal expansion coefficient mismatches, which hinder the development of more efficient and cost-effective technologies for these applications.
Innovation Solution
The use of monolithic 3D integration techniques, including ion-cut, porous silicon approaches, and oxide-to-oxide bonding, allows for the construction of multi-level semiconductor devices with crystalline silicon and integrated circuits, enabling efficient layer transfer and bonding at temperatures below 400°C, thereby overcoming thermal expansion issues and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional bonding methods are used to construct multi-level semiconductor devices, then bonding strength can be achieved, but thermal expansion coefficient mismatches cause defects and reliability issues
Solution Approach 1:
The patent introduces an intermediate oxide layer (silicon dioxide) between dissimilar semiconductor materials with different thermal expansion coefficients. This oxide intermediary accommodates thermal expansion mismatches during processing and operation, preventing bond defects while maintaining strong oxide-to-oxide bonding. The oxide layer acts as a buffer that absorbs thermal stress without compromising the integrity of the bonded structure.
2Manufacturing precision
If high temperature processing is used for layer transfer and bonding, then bonding quality can be improved, but thermal damage occurs to temperature-sensitive components
Solution Approach 1:
The patent changes the bonding parameter from high-temperature direct bonding to low-temperature oxide-to-oxide bonding. By utilizing the chemical compatibility and bonding characteristics of oxide surfaces, the process achieves high-quality bonding at temperatures below 400°C, preventing thermal damage to temperature-sensitive components while maintaining excellent bond strength and interface quality.
3Adaptability or versatility
If traditional RGB LED construction methods are used, then device functionality can be achieved, but manufacturing costs are high and efficiency is low
Solution Approach 1:
The patent merges multiple semiconductor layers (crystalline silicon, III-V materials, oxides) into a single integrated multi-level structure using monolithic 3D integration. This combining approach enables simultaneous fabrication of RGB LED components in one process flow, eliminating the need for separate manufacturing steps for each color layer, thereby reducing manufacturing costs and improving overall device efficiency while maintaining full RGB functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of efficient RGB LEDs, image sensors, and solar cells with improved performance and reduced production costs by allowing for the integration of crystalline silicon and integrated circuits while maintaining low processing temperatures, thus enhancing the efficiency and scalability of these technologies.
Implementation Method 1
an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds
Data Source
AI summary
A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the first level includes crystalline silicon; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.