Oxide Semiconductor Transistor Buffer Layer for Boron Diffusion Control
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Solution Overview
Problem
The stability of transistors in electronic devices is compromised due to unnecessary diffusion of dopants during the manufacturing process, leading to reduced performance and failure to meet consumer expectations.
Innovation Solution
An electronic device structure comprising a substrate, a buffer layer, an oxide semiconductor layer with distinct parts, and a gate electrode, where the buffer layer has varying boron concentrations to prevent boron ion diffusion into the transistor channel region, thereby maintaining stability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If doping is performed in the transistor manufacturing process, then the transistor can achieve required electrical properties, but unnecessary diffusion of dopants occurs which reduces transistor stability
Solution Approach 1:
The buffer layer is designed with non-uniform boron concentration distribution, where the concentration gradually decreases from the substrate interface toward the oxide semiconductor layer. This local variation in dopant concentration creates different functional zones within the buffer layer: a high-concentration region near the substrate for strong electrical properties and a low-concentration region near the channel for preventing dopant diffusion, thereby resolving the contradiction between achieving required electrical properties and preventing harmful dopant diffusion.
Solution Approach 2:
The buffer layer acts as an intermediary structure between the substrate and the oxide semiconductor layer. It serves as a transition zone that mediates the electrical properties needed from heavy doping while preventing the harmful effects of dopant diffusion into the channel. The buffer layer absorbs the conflicting requirements by providing a graded concentration profile that transitions between the substrate and active device regions.
2Ease of manufacture
If uniform boron concentration is used in the buffer layer, then manufacturing is simplified, but dopant diffusion into the channel region cannot be effectively prevented
Solution Approach 1:
The boron concentration parameter in the buffer layer is changed from uniform to graded/non-uniform distribution. This parameter change enables the buffer layer to simultaneously achieve ease of manufacture (as it can still be formed in a single deposition step) and effective prevention of dopant diffusion (through the concentration gradient that creates a diffusion barrier at the channel interface).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enhances the stability and conductivity of transistors by preventing boron ion diffusion, thus improving the overall performance and reliability of electronic devices.
Implementation Method 1
unnecessary diffusion of dopants may occur, which can reduce the stability of the transistors
Implementation Method 2
An ion implantation process is performed by boron on the oxide semiconductor layer
Data Source
AI summary
An electronic device and a manufacturing method thereof are provided. The electronic device includes a substrate, a buffer layer, an oxide semiconductor layer, and a gate electrode. The buffer layer is disposed on the substrate. The oxide semiconductor layer is disposed on the buffer layer and has a first part and a second part adjacent to the first part. The gate electrode is overlapped with the first part. A part of the buffer layer is overlapped with the second part of the oxide semiconductor layer, The part of the buffer layer has a first portion and a second portion disposed on the first portion. The concentration of boron in the first portion is greater than the concentration of boron in the second portion.