Oxide Semiconductor Capacitor Layout for High-Aperture Displays
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high aperture ratio, increased charge capacity of capacitors, reduced power consumption, and improved manufacturing efficiency while maintaining display quality and reliability, particularly in high-resolution displays.
Innovation Solution
The semiconductor device incorporates a light-transmitting capacitor with one electrode made of an oxide semiconductor layer and the other electrode made of a light-transmitting conductive film, utilizing a dielectric formed by multiple insulating films, and employs a manufacturing method that reduces impurities in the oxide semiconductor layers to minimize off-state current and enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the area of the light-blocking conductive film is increased to increase the charge capacity of the capacitor, then the charge capacity increases, but the aperture ratio of the pixel decreases
Solution Approach 1:
The patent applies transparency changes to the capacitor electrodes by using transparent conductive materials such as ITO (indium tin oxide) or transparent oxide semiconductors. This allows the capacitor to maintain its charge capacity while being optically transparent, thus preserving the aperture ratio of the pixel. The transparent electrodes replace traditional light-blocking conductive films, enabling light to pass through the capacitor region without being blocked.
2Reliability
If a light-blocking film is used for the capacitor electrode, then the capacitor can be formed, but the aperture ratio decreases and display quality degrades
Solution Approach 1:
The patent replaces light-blocking conductive materials with transparent conductive materials for the capacitor electrodes. This material substitution maintains the electrical functionality and reliability of the capacitor while allowing light transmission, thereby preserving aperture ratio and display quality. The transparent conductive films perform the dual function of electrical conduction and optical transparency.
3Ease of manufacture
If the oxide semiconductor layer contains impurities, then the manufacturing process is simpler, but the off-state current increases and reliability decreases
Solution Approach 1:
The patent implements preliminary purification steps in the oxide semiconductor fabrication process, including forming the oxide semiconductor layer under controlled conditions that minimize impurity incorporation from the start. This preventive approach reduces off-state current and improves reliability without requiring complex post-processing purification steps, thus maintaining manufacturing efficiency while achieving high device performance.
Solution Approach 2:
The patent controls manufacturing parameters such as deposition temperature, oxygen partial pressure, and sputtering power to optimize the purity of the oxide semiconductor layer. By adjusting these parameters, the process achieves high-purity oxide semiconductor films with low off-state current while maintaining practical manufacturability. The parameter optimization balances purity requirements with process simplicity.
Data Source
AI summary
A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.