Oxide Semiconductor Capacitor Layout for Uniform Display Transistors
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Solution Overview
Problem
Existing display devices face challenges in achieving improved display quality due to variations in device characteristics of semiconducting oxide transistors formed using different processing steps, which affect performance and uniformity.
Innovation Solution
A display device design incorporating a base layer, conductive layers, inorganic and semiconductor layers, and capacitors with specific layer configurations, including oxide semiconductors, to enhance transistor performance and display quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple different semiconducting oxide layers are formed using different processing steps, then transistor performance can be optimized, but device characteristic variations increase
Solution Approach 1:
The transistor structure is divided into multiple functional layers including first and second semiconducting oxide layers, each performing specific functions. The first semiconducting oxide layer forms the channel region while the second forms source/drain regions, allowing independent optimization of each segment's properties to achieve overall performance improvement while maintaining manufacturing consistency
Solution Approach 2:
The patent utilizes phase transitions during atomic layer deposition (ALD) processing to change the physical and chemical parameters of the semiconducting oxide layers in situ. By controlling deposition conditions and inducing phase changes, the material properties are optimized without requiring different processing steps, thereby maintaining device uniformity while achieving performance targets
2Manufacturing precision
If inorganic insulating films and multiple oxide layers are layered to form capacitors, then display quality improves, but device complexity increases
Solution Approach 1:
The first semiconducting oxide layer serves multiple functions simultaneously: it acts as the channel region for transistor operation, functions as one electrode of the storage capacitor, and provides the structural foundation for subsequent layer deposition. This multi-functionality reduces the need for separate dedicated layers, simplifying the overall device structure while maintaining high display quality
Solution Approach 2:
The patent combines the channel region formation and capacitor electrode formation into a single first semiconducting oxide layer. By merging these two functional requirements into one material layer, the device complexity is reduced while still achieving the necessary electrical performance for both transistor operation and charge storage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design achieves improved display quality by stabilizing transistor performance and uniformity, addressing variations in device characteristics through optimized layer configurations.
Implementation Method 1
the first conductive layer may be a first electrode of a first capacitor, the first semiconductor layer may be a second electrode of the first capacitor and a first electrode of a second capacitor, and the second semiconductor layer may be a second electrode of the second capacitor
Data Source
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AI summary
A display device includes a base layer, a first conductive layer disposed on the base layer, an inorganic layer disposed on the first conductive layer, a first semiconductor layer including an oxide semiconductor and disposed on the inorganic layer, and a first insulation layer disposed on the first semiconductor layer, a second semiconductor layer including an oxide semiconductor, and disposed on the first insulation layer, wherein the first conductive layer is a first electrode of a first capacitor, the first semiconductor layer is a second electrode of the first capacitor and a first electrode of a second capacitor, and the second semiconductor layer is a second electrode of the second capacitor.