Oxide Semiconductor Capacitor Stack for Low Leak Current Stability
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Solution Overview
Problem
Semiconductor devices face challenges in achieving small variations in electrical characteristics, favorable reliability, high on-state current, miniaturization, and low power consumption, particularly in transistors using oxide semiconductors.
Innovation Solution
A manufacturing method for semiconductor devices involving the formation of capacitors with specific insulator and conductor layers, utilizing ALD and CVD methods, and heat or microwave treatments to manage hydrogen diffusion, resulting in low leak current and stable electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If transistors using oxide semiconductors are employed to achieve low power consumption, then power consumption is reduced, but variation in electrical characteristics increases
Solution Approach 1:
The patent applies parameter changes by controlling the concentration of hydrogen in the oxide semiconductor layer through specific manufacturing processes. By adjusting hydrogen concentration parameters during film formation and heat treatment, the patent achieves both low power consumption and reduced variation in electrical characteristics, resolving the contradiction between energy efficiency and reliability.
Solution Approach 2:
The patent implements local quality by creating specific regions with controlled hydrogen distribution within the oxide semiconductor layer. Through selective area treatment and layered structure design, different regions have optimized hydrogen concentrations that simultaneously achieve low power consumption and stable electrical characteristics across the device.
2Volume of moving object
If transistors are miniaturized to increase integration density, then device size is reduced, but on-state current decreases
Solution Approach 1:
The patent uses parameter changes by optimizing the hydrogen concentration and oxide semiconductor crystal structure to enhance carrier mobility. This allows miniaturized transistors to maintain high on-state current through improved material properties rather than increased device dimensions.
Solution Approach 2:
The patent employs composite materials by combining oxide semiconductor layers with specific hydrogen concentration profiles and complementary material layers. This composite structure enables miniaturized devices to achieve high on-state current through the synergistic effects of different material properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method provides semiconductor devices with stable electrical characteristics, high on-state current, and low power consumption, enabling miniaturization and integration.
Implementation Method 1
by heat treatment, hydrogen contained in the third insulator diffuses into and is absorbed by the second insulator
Implementation Method 2
by heat treatment, hydrogen contained in the third insulator diffuses into and is absorbed by the second insulator
Data Source
AI summary
A semiconductor device with a small variation in characteristics is provided. In a manufacturing method of a semiconductor device including a capacitor with reduced leak current, a first conductor is formed; a second insulator is formed over the first conductor; a third insulator is formed over the second insulator; a second conductor is formed over the third insulator; a fourth insulator is deposited over the second conductor and the third insulator; by heat treatment, hydrogen contained in the third insulator diffuses into or is absorbed by the second insulator; the first conductor is one electrode of the capacitor; the second conductor is the other electrode of the capacitor; and each of the second insulator and the third insulator is a dielectric of the capacitor.