Oxide Semiconductor Channel Layout for Stable Oxygen Supply
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Solution Overview
Problem
Semiconductor devices using oxide semiconductors as channels face reliability issues due to oxygen vacancies and defects in the insulating layer, which affect the stability and performance of the device.
Innovation Solution
The semiconductor device incorporates an oxide semiconductor layer with unevenly distributed indium, where the indium is segregated in specific regions to improve the reliability by forming an uneven distribution of indium, enhancing the device's performance and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating layer containing a large amount of oxygen is formed to supply oxygen to the oxide semiconductor, then oxygen supply is improved, but the insulating layer contains many defects causing abnormal characteristics and reliability fluctuations
Solution Approach 1:
The patent applies local quality by creating an uneven distribution of indium within the oxide semiconductor layer. Specifically, the indium concentration is made higher in regions adjacent to the insulating layer interface compared to the bulk channel region. This localized compositional variation enables preferential oxygen supply from the insulating layer to the oxide semiconductor at the interface, improving oxygen stoichiometry without requiring the insulating layer to contain excessive oxygen that would create defects. The local enrichment of indium at the interface region facilitates oxygen incorporation precisely where needed for reliability improvement.
2Manufacturing precision
If an insulating layer with less defects is used to reduce abnormal characteristics, then manufacturing precision is improved, but the oxygen content in the insulating layer cannot be increased sufficiently to provide enough oxygen to the oxide semiconductor
Solution Approach 1:
The patent resolves this contradiction by implementing local quality through uneven indium distribution. The oxide semiconductor layer is designed with higher indium concentration near the insulating layer interface, which creates regions with different oxygen affinity. This local compositional variation allows the insulating layer to supply oxygen efficiently to specific regions of the oxide semiconductor without requiring the insulating layer itself to contain high oxygen content that would compromise its quality and introduce defects.
Solution Approach 2:
The patent applies parameter changes by modifying the indium concentration parameter within the oxide semiconductor layer. By varying the indium concentration spatially (higher at the interface, lower in the bulk), the patent changes the chemical and physical properties of the oxide semiconductor to enhance oxygen uptake from the insulating layer. This parameter variation enables the system to achieve sufficient oxygen supply while maintaining the insulating layer with low defect density and appropriate oxygen content.
Data Source
AI summary
A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.