Oxide Semiconductor Channel Formation for Stable Transistor Characteristics

The patent applies preliminary action by forming a protective insulator layer over the oxide semiconductor material before oxygen diffusion can occur, and performing oxygen ion implantation in advance to saturate the material with oxygen. This prevents oxygen diffusion issues from developing later in the manufacturing process, thereby improving transistor characteristic consistency without requiring complex real-time control mechanisms.

The patent introduces an insulator layer as an intermediary between the oxide semiconductor material and the external environment. This insulator acts as a barrier that mediates oxygen diffusion, preventing unwanted oxygen loss or contamination. Additionally, oxygen ions are used as intermediaries to deliberately control the oxygen content in the oxide semiconductor, achieving reliable transistor characteristics through controlled oxygen saturation.

The patent applies parameter changes by controlling the oxygen content parameter in the oxide semiconductor material through ion implantation. By adjusting the oxygen ion dose, energy, and implantation conditions, the electrical characteristics and on-state current can be precisely controlled. This transforms the material's physical and electrical parameters to achieve consistent performance across different manufacturing batches.

The patent uses oxygen ions as a strong oxidant to deliberately oxidize the oxide semiconductor material during the ion implantation process. This accelerated oxidation approach ensures uniform and controlled oxygen distribution in the material, improving electrical characteristic consistency and on-state current performance by eliminating oxygen deficiency variations that would otherwise occur during standard deposition.

The patent converts the potentially harmful effect of impurities into a benefit by using oxygen ion implantation. The high-energy oxygen ions not only add oxygen to compensate for oxygen loss but also displace and remove unwanted impurities from the oxide semiconductor lattice during the implantation process. This transforms a simple deposition process into a dual-function process that simultaneously adds beneficial oxygen and removes harmful impurities.

The patent employs oxygen ions as strong oxidants that serve dual purposes: oxidizing oxygen-deficient regions in the oxide semiconductor and simultaneously displacing impurity atoms from the crystal lattice. The high energy of the oxygen ions enables them to break impurity bonds and eject impurity atoms, achieving purification while maintaining material integrity and improving device reliability.