Oxide Semiconductor Channel Structure for Oxygen and Hydrogen Stability
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Solution Overview
Problem
Existing semiconductor structures are inadequate in maintaining the robustness and reliability of oxide semiconductor channels due to hydrogen and oxygen concentration variations, which affect electrical properties and threshold voltage shifts.
Innovation Solution
Incorporating a regulating layer between the channel layer and the gate dielectric layer to manage oxygen movement and a barrier layer to prevent hydrogen diffusion, thereby stabilizing the channel layer's properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor structure without regulating layer is used, then the manufacturing process is simpler, but oxygen concentration variations occur in the channel layer affecting electrical properties
Solution Approach 1:
An oxygen regulating layer is introduced as an intermediary component between the gate dielectric layer and the oxide semiconductor channel layer. This regulating layer acts as a buffer to control oxygen concentration variations, preventing oxygen from migrating into the channel layer and causing electrical property changes. The regulating layer mediates the oxygen concentration issue without requiring fundamental changes to the existing semiconductor structure.
Solution Approach 2:
The gate dielectric structure is segmented into multiple functional layers: the gate dielectric layer and the oxygen regulating layer. This segmentation allows each layer to perform its specific function - the gate dielectric layer provides electrical isolation while the oxygen regulating layer specifically manages oxygen concentration. By dividing the structure into specialized segments, the patent addresses oxygen concentration variations without compromising the overall device simplicity.
2Reliability
If hydrogen barrier layers are not incorporated, then the manufacturing process is less complex, but hydrogen diffusion occurs causing threshold voltage shifts
Solution Approach 1:
Hydrogen barrier layers are introduced as intermediary components between the source/drain electrodes and the oxide semiconductor channel layer. These barrier layers specifically target and prevent hydrogen diffusion from the electrodes into the channel layer, thereby maintaining threshold voltage stability. The barrier layers act as selective mediators that block hydrogen while allowing the manufacturing process to remain relatively simple.
Solution Approach 2:
Hydrogen barrier layers are strategically positioned only in the regions where hydrogen diffusion is most problematic - specifically between the source/drain electrodes and the channel layer. This localized application of barrier functionality addresses the specific issue of hydrogen-induced threshold voltage shifts without requiring comprehensive restructuring of the entire device, thus maintaining manufacturing simplicity while improving reliability.
3Stability of the object's composition
If regulating layers are added to prevent oxygen movement, then oxygen concentration stability improves, but device structure becomes more complex
Solution Approach 1:
The oxygen regulating layer serves as a dedicated intermediary component that specifically addresses oxygen concentration stability. By placing this regulating layer between the gate dielectric and the channel, the patent creates a specialized buffer zone that controls oxygen migration. This intermediary approach achieves composition stability through a targeted structural addition rather than requiring complex modifications to existing layers.
Solution Approach 2:
The gate dielectric structure is formed as a composite of multiple materials with different oxygen permeability characteristics. The gate dielectric layer and the oxygen regulating layer are composed of different materials selected for their specific oxygen barrier properties. This composite structure leverages the complementary characteristics of different materials to achieve superior oxygen concentration stability while maintaining a relatively simple overall architecture.
4Reliability
If barrier layers are added to prevent hydrogen diffusion, then threshold voltage stability improves, but manufacturing complexity increases
Solution Approach 1:
Hydrogen barrier layers are applied locally only in the critical regions where hydrogen diffusion occurs - specifically at the interface between source/drain electrodes and the channel layer. This localized barrier approach addresses the specific problem of hydrogen-induced threshold voltage shifts without requiring comprehensive process redesign. The barrier layers are integrated into existing manufacturing steps, minimizing additional process complexity while achieving improved reliability.
Solution Approach 2:
Hydrogen barrier layers are introduced as intermediary components that specifically mediate the hydrogen diffusion problem. These barrier layers are positioned between the source/drain electrodes and the channel layer to block hydrogen migration pathways. By using these intermediary barrier layers, the patent achieves threshold voltage stability through a targeted addition that integrates smoothly into the existing manufacturing process without requiring fundamental process changes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the reliability and electrical performance of back-end semiconductor devices by reducing oxygen and hydrogen concentration variations, preventing threshold voltage shifts, and maintaining robustness.
Implementation Method 1
a regulating layer separating the channel layer from the gate dielectric layer, wherein the regulating layer prevents oxygen from moving through the regulating layer to the channel layer or the gate dielectric layer
Implementation Method 2
a barrier layer surrounding the source/drain contacts and separating the source/drain contacts from the channel layer
Data Source
AI summary
A semiconductor structure includes a transistor including a gate layer, source/drain contacts, a channel layer including an oxide semiconductor material, a gate dielectric layer connecting the gate layer, and a regulating layer separating the channel layer from the gate dielectric layer. The regulating layer is an oxide layer which prevents oxygen from moving through the regulating layer to the channel layer or the gate dielectric layer.