Silicon Oxide CMP Slurry Composition for Fast Low-Defect Polishing

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Solution Overview

Problem

Conventional polishing liquid compositions for silicon oxide films in semiconductor manufacturing are not efficient enough to achieve high-speed polishing without causing scratches or flaws, limiting the productivity of semiconductor devices.

Innovation Solution

A polishing liquid composition containing cerium oxide particles and a water-soluble macromolecular compound with a betaine structure, excluding carbobetaine and sulfobetaine homopolymers, is used to enhance the polishing speed and selectivity of silicon oxide films, improving the manufacturing process of semiconductor devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional polishing liquid compositions are used, then scratches and flaws are mitigated, but polishing speed is limited

Engineering Contradiction:
Improvepolishing speedVSAvoidsurface quality
Core Design Contradiction:
SpeedVSManufacturing precision

Solution Approach 1:

The invention changes the chemical composition parameters of the polishing liquid by introducing a specific water-soluble macromolecular compound with betaine structure (excluding carbobetaine and sulfobetaine homopolymers) in combination with cerium oxide particles. This compositional parameter change enables high polishing speed while maintaining surface quality, resolving the contradiction between speed and precision.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses a composite polishing liquid composition combining cerium oxide particles with a specific water-soluble macromolecular compound having betaine structure. This composite material approach allows the synergistic effect of mechanical abrasion from cerium oxide and chemical interaction from the macromolecular compound, achieving both high speed and high quality polishing.

Inventive Principle:
Principle #40Composite materials

2Productivity

If polishing speed is increased, then productivity improves, but substrate damage increases

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidsubstrate damage
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

By changing the chemical composition parameters to include a specific water-soluble macromolecular compound with betaine structure, the invention enables high-speed polishing without excessive substrate damage. The unique molecular structure provides selective chemical interaction that protects the substrate while allowing rapid material removal.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The water-soluble macromolecular compound acts as an intermediary between the cerium oxide particles and the silicon oxide film. It facilitates controlled chemical interaction that enables high-speed polishing while minimizing harmful effects on the substrate, mediating between mechanical removal and chemical protection.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition allows for high-speed polishing of silicon oxide films with reduced flaws, thereby improving the productivity and quality of semiconductor devices by efficiently removing material while minimizing damage to the substrate.

Implementation Method 1

a chemical-mechanical polishing (CMP) technique is a technique for smoothing the surface of a polishing-target substrate by removing uneven portions on the surface thereof through a chemical reaction and a mechanical process

Methodology Applied
Scientific EffectMechanical abrasion: Abrasion

Implementation Method 2

a chemical-mechanical polishing (CMP) technique is a technique for smoothing the surface of a polishing-target substrate by removing uneven portions on the surface thereof through a chemical reaction and a mechanical process

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 3

the water-soluble macromolecular compound is a water-soluble macromolecular compound including a betaine structure, excluding carbobetaine homopolymers and sulfobetaine homopolymers

Methodology Applied
Scientific EffectChemical interaction: Chemical Bonding

Data Source

PatentUS11795346B2Polishing liquid composition for silicon oxide film
Publication Date: 2023.10.24 KAO CORP
  • US11795346B2 patent drawing
  • US11795346B2 patent drawing
  • US11795346B2 patent drawing

AI summary

A polishing liquid composition for a silicon oxide film according to the present invention includes cerium oxide particles, a water-soluble macromolecular compound, and an aqueous medium, and the water-soluble macromolecular compound is a water-soluble macromolecular compound including a betaine structure, excluding carbobetaine homopolymers and sulfobetaine homopolymers. The water-soluble macromolecular compound is preferably a water-soluble macromolecular compound containing a constitutional unit A including a betaine structure, and a constitutional unit B that is a constitutional unit other than the constitutional unit A and contains at least one group of a primary amino group, a secondary amino group, a tertiary amino group, a quaternary ammonium group, and salts thereof.