Oxide Semiconductor Contact Layout for Low-Resistance Display Wiring

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Solution Overview

Problem

The semiconductor circuit disclosed in Patent Document 1 faces an issue of increased contact resistance between the conductor region and the metal layer in the oxide semiconductor layer when electrically connected through a contact hole.

Innovation Solution

A display device configuration that includes a crystalline silicon semiconductor layer, a first gate insulating film, a first interlayer insulating film, a lower metal layer, an oxide semiconductor layer, a second gate insulating film, a second interlayer insulating film, and an upper metal layer, with strategically placed contact holes to reduce contact resistance by ensuring proper electrical connection between the conductor regions and metal layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a contact hole is used to electrically connect the conductor region and metal layer in the oxide semiconductor layer, then electrical connection is achieved, but contact resistance increases

Engineering Contradiction:

Improveelectrical connectionVSAvoidcontact resistance

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The contact hole is divided into multiple sections with different filling materials along the depth direction. The upper portion uses a first conductor material while the lower portion uses a second conductor material, allowing each section to be optimized for its specific function and reducing overall contact resistance

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different conductor materials are used in different regions of the contact hole. The upper region uses a material optimized for connection to the conductor region, while the lower region uses a material optimized for connection to the metal layer, with each region having locally optimized properties

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS12119405B2Display device having a first transistor including a crystalline silicon semiconductor layer and a second transistor including an oxide semiconductor layer

Publication Date: 2024.10.15 SHARP KK

AI summary

An oxide semiconductor layer includes a second channel region and a second conductor region. The lower metal layer includes a contact wire in contact with the second conductor region. The upper metal layer includes an upper wire. A second interlayer insulating film is provided with a second contact hole overlapping an upper wire and the contact wire. The second conductor region and the upper wire electrically connect together through the contact wire.