Oxide-Conductor Contact Layout for Miniaturized Semiconductor Memory
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Solution Overview
Problem
Current semiconductor devices face challenges in miniaturization, high integration, favorable electrical and frequency characteristics, reliability, productivity, long-term data retention, high-speed data writing, design flexibility, and reduced power consumption.
Innovation Solution
A semiconductor device is designed with a structure that includes a first oxide, an insulator, a first conductor, a second conductor electrically connected to the first oxide, and a second oxide between the first oxide and the second conductor, where the contact area between the second oxide and the second conductor is larger than the contact area between the second oxide and the first oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the contact area between oxide and conductor is increased to improve electrical characteristics, then the device area increases, but miniaturization is hindered
Solution Approach 1:
The patent applies local quality by creating different contact area relationships in different regions of the device. Specifically, the second oxide has a larger contact area with the second conductor than with the first oxide, optimizing electrical characteristics locally at the conductor-oxide interface while maintaining overall device miniaturization.
Solution Approach 2:
The patent introduces a multi-layer vertical structure with first oxide, second oxide, first conductor, and second conductor arranged in different dimensions. This vertical stacking approach allows increased contact area in the vertical dimension without expanding the horizontal device footprint, resolving the contradiction between electrical characteristics and miniaturization.
2Productivity
If transistor density is increased to achieve high integration, then the number of transistors per unit area increases, but manufacturing precision requirements become more stringent
Solution Approach 1:
The patent segments the oxide layer into first oxide and second oxide with different contact area relationships to different conductors. This segmentation allows independent optimization of electrical characteristics for each transistor region, enabling high transistor density while maintaining manageable manufacturing precision requirements through modular design.
Data Source
AI summary
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first oxide, an insulator over the first oxide, a first conductor over the insulator, a second conductor electrically connected to the first oxide, and a second oxide provided between the first oxide and the second conductor, and the contact area between the second oxide and the second conductor is larger than the contact area between the second oxide and the first oxide.