Oxide Current Aperture for Micro LED Surface Recombination
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Solution Overview
Problem
Semiconductor devices, particularly micro LEDs, suffer from non-radiative surface recombination due to small device geometries, leading to poor performance and reduced efficiency in optoelectronic applications.
Innovation Solution
The introduction of an oxide current aperture, formed by selectively oxidizing a conducting semiconductor layer to create a non-oxidized region in the center and an oxidized region around it, concentrates current density and reduces surface recombination by directing current flow through the non-oxidized region, thereby minimizing carrier recombination at the surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If small device geometries are used, then device size is reduced, but surface recombination increases leading to poor performance
Solution Approach 1:
The patent applies local quality by creating an oxide current aperture with a specific spatial distribution: an oxidized region surrounding a non-oxidized central region. This localized structural differentiation addresses surface recombination specifically at the device periphery while preserving the active region functionality, thereby improving device performance without requiring larger device dimensions.
2Volume of moving object
If small device geometries are used, then device size is reduced, but current density distribution deteriorates
Solution Approach 1:
The oxide current aperture creates distinct zones with different electrical properties: the non-oxidized central region maintains high conductivity for current injection, while the oxidized peripheral region provides current confinement. This local quality differentiation ensures uniform current density distribution across the active region, addressing the deterioration caused by small device geometries.
3Reliability
If oxide current aperture is introduced, then surface recombination is reduced, but device complexity increases
Solution Approach 1:
The oxide current aperture is formed by changing the oxidation state of the semiconductor material in different spatial regions. This parameter change (oxidized vs. non-oxidized states) creates the current aperture structure that reduces surface recombination. The method achieves this through controlled oxidation processes rather than adding separate structural components, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance of micro LEDs by reducing surface recombination, increasing current density, and optimizing carrier lifetime and diffusion length, leading to improved efficiency and reliability in micro LED devices.
Implementation Method 1
an oxide current aperture between the P-type semiconductor layer and the active region, wherein the oxide current aperture includes a non-oxidized region surrounded by an oxidized region
Implementation Method 2
formed by selectively oxidizing a conducting semiconductor layer to create a non-oxidized region in the center and an oxidized region around it
Data Source
AI summary
A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.