Integrated Oxide Deposition for Sub-Resolution Resist Pattern Slimming
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in forming fine patterns with pitches below the resolution limit of photolithographic techniques, leading to increased manufacturing costs due to the need for additional dimension correction processes like slimming, trimming, or smoothing, which can introduce defects and unevenness in silicon oxide films.
Innovation Solution
A method and apparatus for continuously performing the slimming and film deposition processes in a single film deposition apparatus, using oxygen radicals and source gases to form oxide films on resist patterns, maintaining precise dimensions and reducing defects and cost by minimizing the need for separate etching and deposition devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithographic technique is used to form fine patterns, then pattern formation is achieved, but patterns with pitch below resolution limit cannot be formed
Solution Approach 1:
The patent divides the pattern formation process into multiple stages: first forming a preliminary pattern through photolithography, then using additional processes (such as self-aligned etching or sequential patterning) to refine and split the pattern into finer features. This segmentation allows achieving sub-resolution pitches by breaking down the single-step limitation into multi-step refinement
Solution Approach 2:
The patent performs preliminary pattern formation and preparation steps before the final fine pattern creation. By pre-forming structures, applying masks, or creating sacrificial patterns that guide subsequent etching or deposition, the system prepares the substrate in advance to enable formation of patterns below the photolithographic resolution limit
2Manufacturing precision
If additional dimension correction processes (slimming, trimming, smoothing) are performed to correct pattern dimensions, then manufacturing precision is improved, but manufacturing cost increases and defects are introduced
Solution Approach 1:
The patent combines the dimension correction functions (slimming, trimming, smoothing) into the primary patterning process itself. By integrating these corrections into the main fabrication flow rather than adding separate post-processing steps, the method achieves precise pattern dimensions while avoiding the additional cost and defect introduction associated with multiple sequential correction processes
3Reliability
If separate etching and deposition devices are used for slimming and film deposition, then process specialization is achieved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent employs a multi-functional processing device that can perform both etching (for slimming) and deposition (for film formation) operations. This universal device consolidates the functions of separate specialized equipment, reducing overall system complexity and manufacturing cost while maintaining the ability to execute both process types with appropriate parameter adjustment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of fine patterns with improved uniformity and reduced defect density, maintaining precise dimensions and reducing manufacturing costs by integrating slimming and film deposition within a single process, thus enhancing the efficiency and quality of semiconductor substrate processing.
Implementation Method 1
a film deposition apparatus which supplies a source gas and oxygen radicals to a process chamber and forms an oxide film on a semiconductor substrate
Implementation Method 2
supplies a source gas and oxygen radicals to a process chamber and forms an oxide film
Data Source
AI summary
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.