Oxide Dielectric Sensor Element for Integrated Light Sensing and Memory
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current CMOS image sensor and NAND flash memory technologies face challenges in achieving higher resolution and scalability due to minimal charge storage, leading to parameter variability and limited operating speed, as well as integration issues with aspect ratio differences between sensing and memory elements.
Innovation Solution
A sensor element and image sensor utilizing an oxide dielectric layer with conductive filaments that modulate resistance in response to optical light, allowing for increased resistance and scalable design, enabling direct integration of light sensing and memory functions without external data transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sensor and memory component dimensions are scaled down to achieve higher sensing resolution and storage capacity, then resolution and storage capacity are improved, but charge storage quantity decreases leading to parameter variability and memory window shrinkage
Solution Approach 1:
The patent merges the sensor element and memory element into a single integrated device structure. The sensor element includes a photodiode for light detection and a memory element with floating gate for charge storage, both formed within the same device. This integration allows the sensor to maintain high resolution while the memory element provides sufficient charge storage capacity, eliminating the trade-off between scaling for resolution and maintaining charge storage quantity.
2Device complexity
If sensor and memory elements are integrated on-chip, then integration density is improved, but aspect ratio differences between sensing and memory elements prevent direct integration
Solution Approach 1:
The patent employs a vertical stacked architecture where the photodiode, charge storage region, and floating gate are arranged in vertical layers rather than lateral placement. This dimensional transition from planar to vertical integration allows elements with different aspect ratios to be integrated on-chip without conflict, as they occupy different vertical levels within the same footprint area.
3Area of stationary object
If sensor and memory circuits are integrated at component level, then device area is reduced, but operating speed is limited by external data buses
Solution Approach 1:
The patent combines the sensor element and memory element into a single integrated device with direct internal connection. The photodiode and floating gate are formed within the same device structure, allowing charge to be transferred directly from the photodiode to the floating gate without traversing external data buses. This internal integration eliminates the speed bottleneck while maintaining compact device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances image sensing resolution and scalability, maintains sensitivity, and extends memory retention by integrating light sensing and memory capabilities within a single device, overcoming the limitations of traditional CMOS technologies.
Implementation Method 1
The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element
Implementation Method 2
The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light
Data Source
AI summary
A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, and an oxide dielectric element between the first electrode and the second electrode. The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element. The sensor element may also include a detector. The first electrode may be configured to allow the optical light to pass through the first electrode to the oxide dielectric element. The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light.