Mixed-Metal Oxide Diode Without a PN Junction for High Rectification

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Solution Overview

Problem

Existing diode devices rely on pn-junctions formed by p-type and n-type semiconductors, which limit the size of the electric field and voltage rectification, and require complex manufacturing processes involving separate materials and ion implantation.

Innovation Solution

A diode device with an active layer composed of a 5d transition mixed-metal oxide, such as SraCa(1-a)IrO3, where the composition ratio of elements like Sr and Ca varies incrementally along the thickness direction, breaking inversion symmetry and enabling high non-mutual conduction without a pn-junction, simplifying manufacturing by using a single metallic material.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a pn-junction is used to form a potential barrier voltage, then current control is achieved, but the size of the electric field and voltage rectification are limited

Engineering Contradiction:

Improveelectric field strengthVSAvoiddevice structure complexity

Core Design Contradiction:

StrengthVSDevice complexity

Solution Approach 1:

The patent changes the material composition parameter by using a 5d transition metal oxide with variable composition ratio (indice a from 0 to 1) to achieve different electric field strengths and rectification voltages without changing the basic device structure, thereby achieving high voltage rectification while maintaining structural simplicity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite material system consisting of a 5d transition metal oxide combined with a perovskite material, where the composition ratio can be adjusted to optimize both the electric field strength and voltage rectification characteristics, resolving the contradiction between performance enhancement and structural complexity

Inventive Principle:

Principle #40Composite materials

2Reliability

If separate p-type and n-type semiconductor materials are used to form a pn-junction, then diode functionality is achieved, but the manufacturing process becomes complex involving separate materials and ion implantation

Engineering Contradiction:

Improvediode functionalityVSAvoidmanufacturing process simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent merges the functions of p-type and n-type semiconductors into a single 5d transition metal oxide material layer with variable composition, eliminating the need for separate material deposition and ion implantation processes while maintaining diode rectification functionality, thus significantly simplifying the manufacturing process

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent applies local quality by creating regions with different composition ratios (indice a values) within the same material layer, where the composition varies spatially to achieve different electrical properties (p-type and n-type characteristics) without requiring separate materials, thereby simplifying manufacturing while preserving diode functionality

Inventive Principle:

Principle #3Local quality

3Loss of energy

If a conventional pn-junction diode is used, then current rectification is achieved, but heat loss increases and oxidation resistance decreases

Engineering Contradiction:

Improveheat lossVSAvoidoxidation resistance

Core Design Contradiction:

Loss of energyVSObject-affected harmful factors

Solution Approach 1:

The patent utilizes parameter changes in the 5d transition metal oxide composition (indice a) to optimize electrical conductivity and reduce resistive heat loss, while the inherent stability of the 5d transition metal oxide material provides improved oxidation resistance compared to conventional semiconductors

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite material system of 5d transition metal oxide and perovskite material that combines low heat loss characteristics with high oxidation resistance, achieving both energy efficiency and environmental stability simultaneously

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The diode device achieves high-voltage rectification and improved efficiency with reduced heat loss, allowing for simplified manufacturing and enhanced oxidation resistance, suitable for various semiconductor devices.

Implementation Method 1

breaking inversion symmetry and enabling high non-mutual conduction without a pn-junction

Methodology Applied

Scientific EffectNon-mutual conduction:

Implementation Method 2

control the movement of charge carriers generated by an electric field

Methodology Applied

Scientific EffectElectric field: Electric Field

Data Source

PatentUS20250241032A1Diode and semiconductor device

Publication Date: 2025.07.24 SAMSUNG ELECTRONICS CO LTD

AI summary

A diode device and a semiconductor device including the diode device, the diode device including an active layer including a 5d transition mixed-metal oxide including a first element and a second element different from the first element. The composition ratios of the first element relative to the second element incrementally varies along a thickness direction of the active layer.