Oxide Semiconductor Display Transistor Layout for Stable ON-State Current
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The resistance of oxide semiconductor patterns in display devices increases, leading to a reduction in the ON-state current of transistors, which affects the performance of the display device.
Innovation Solution
Incorporating a metal pattern on the low-resistance parts of the oxide semiconductor pattern, which includes a channel overlapping the lower gate signal line, to increase oxygen vacancies and reduce resistance, thereby preventing a decrease in the ON-state current. The metal pattern is made of materials like tungsten, titanium, molybdenum, or aluminum and is disposed on the surface of the low-resistance parts to enhance conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal pattern is added to the oxide semiconductor pattern to reduce resistance, then the ON-state current increases, but the device structure and manufacturing process become more complex
Solution Approach 1:
The metal pattern is merged with the oxide semiconductor pattern by forming the metal pattern directly on the oxide semiconductor pattern in the low-resistance region. This integration allows the metal pattern to reduce resistance without requiring separate processing steps or additional structural components, thereby improving ON-state current while minimizing device complexity
Solution Approach 2:
The metal pattern is selectively formed only in the low-resistance region of the oxide semiconductor pattern, not throughout the entire structure. This localized approach reduces resistance where needed while avoiding unnecessary complexity in other regions, maintaining a balance between performance improvement and structural simplicity
2Ease of manufacture
If the oxide semiconductor pattern is used to form transistors, then the display device can be manufactured with existing processes, but the resistance increases and ON-state current decreases
Solution Approach 1:
The resistance parameter of the oxide semiconductor pattern is changed by forming a metal pattern within it. The metal pattern has inherently lower resistance than the oxide semiconductor material, and by introducing this material with different electrical parameters into the low-resistance region, the overall resistance is reduced and ON-state current is increased while maintaining compatibility with existing manufacturing processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of the metal pattern on the low-resistance parts of the oxide semiconductor pattern reduces the resistance, preventing a reduction in the ON-state current and maintaining the performance of the compensation transistor, thus enhancing the overall display device efficiency.
Implementation Method 1
the metal pattern may include oxygen atoms or oxygen ions diffused from the oxide semiconductor pattern
Data Source
AI summary
A display device may include a first active layer disposed on a substrate, a scan line disposed on the first active layer, a lower gate signal line disposed on the scan line, an oxide semiconductor pattern disposed on the lower gate signal line, and including a channel part that overlaps the lower gate signal line and a low-resistance part formed on a side portion of the channel part, a metal pattern disposed on at least one surface of the low-resistance part, and an upper gate signal line disposed on the oxide semiconductor pattern to overlap the channel part.