Oxide Semiconductor Display Light Leakage Prevention
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Solution Overview
Problem
In display devices using oxide semiconductors, light leakage occurs due to the polarization state change of light at the inclined side walls of openings in the transparent conductive layer, leading to reduced image contrast.
Innovation Solution
The display device configuration includes a light-shielding layer and a specific arrangement of the transparent conductive layer, where the connecting electrode is only on the first side wall of the opening overlapping the light-shielding layer, preventing light leakage by avoiding the second side wall, and a barrier layer is used to prevent moisture from reaching the oxide semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a transparent conductive layer is used as wiring connected to the oxide semiconductor layer, then light transmittance is improved, but light leakage occurs due to polarization state change at the opening side wall
Solution Approach 1:
The patent applies different treatments to different parts of the opening structure. The first side wall of the opening is maintained with the transparent conductive layer to preserve light transmittance, while the second side wall is specifically modified by removing or reducing the transparent conductive layer to prevent light leakage. This localized differentiation resolves the contradiction by optimizing each region for its specific function.
Solution Approach 2:
The opening structure is segmented into multiple side walls (first side wall and second side wall), and the transparent conductive layer is selectively applied to different segments. This segmentation allows the patent to achieve both light transmittance (through the first side wall) and light leakage prevention (at the second side wall) simultaneously.
2Reliability
If oxygen is supplied to the oxide semiconductor to reduce oxygen vacancies, then device stability is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent incorporates oxygen supply measures during the manufacturing process, specifically by forming an insulating layer containing oxygen before final device completion. This preliminary action ensures oxygen vacancies are reduced in advance, improving device stability without requiring additional complex post-processing steps.
Solution Approach 2:
The patent combines the oxygen supply function with the insulating layer formation process. By integrating oxygen-containing materials into the insulating layer that is already part of the device structure, the patent achieves oxygen supplementation without adding separate complex manufacturing steps, thus improving device stability while minimizing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the display performance by minimizing light leakage and maintaining high contrast, while also preventing oxygen vacancies in the oxide semiconductor layer.
Implementation Method 1
a polarization state of a light incident in a direction orthogonal to a main surface of a substrate is changed by a refraction in the transparent conductive layer arranged on the side wall of the opening
Data Source
AI summary
A display device includes: an oxide semiconductor layer; a gate electrode facing the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; a light-shielding layer overlapping part of the oxide semiconductor layer in a plan view; a first insulating layer covering the oxide semiconductor layer, the gate electrode, and the gate insulating layer, the first insulating layer including a first opening including a first side wall overlapping the light-shielding layer and a second side wall not overlapping the light-shielding layer in a plan view; and a transparent conductive layer arranged above the first insulating layer and connected to the oxide semiconductor layer via the first opening. The transparent conductive layer is arranged in an area overlapping the first side wall and is not arranged in at least part in an area overlapping the second side wall in a plan view.