Oxide Semiconductor Display Stack With Oxygen Supply Layer

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Solution Overview

Problem

Display devices using oxide semiconductors face issues with oxygen defects acting as carriers, leading to conductor-like behavior and low threshold voltages, which affect reliability and performance.

Innovation Solution

Incorporation of an oxygen supply layer, typically made of metal oxides like indium, zinc, and gallium, to supply oxygen to the semiconductor layer, ensuring adequate oxygen levels and maintaining semiconductor functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If oxide semiconductor is used in the semiconductor layer, then the device can be manufactured with existing processes, but oxygen defects act as carriers causing conductor-like behavior and low threshold voltage

Engineering Contradiction:
ImprovemanufacturabilityVSAvoidthreshold voltage
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

An oxygen supply layer is formed beneath the oxide semiconductor layer before device operation. This layer pre-supplies oxygen to fill oxygen vacancies in the semiconductor, preventing the semiconductor from exhibiting conductor-like behavior due to oxygen defects, thereby maintaining reliable threshold voltage characteristics

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The oxygen supply layer acts as an intermediary between the substrate and the oxide semiconductor layer. It mediates oxygen transfer to the semiconductor layer, ensuring adequate oxygen supply without requiring complex manufacturing processes or changing the fundamental oxide semiconductor material structure

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the oxygen supply layer is made thicker to supply more oxygen, then oxygen vacancies are better eliminated, but the device structure becomes more complex and manufacturing difficulty increases

Engineering Contradiction:
Improvesemiconductor stabilityVSAvoidlayer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The thickness of the oxygen supply layer is optimized within a specific range (30%-50% of the semiconductor layer thickness) to achieve adequate oxygen supply without excessive complexity. This parameter optimization balances oxygen supply effectiveness with manufacturing feasibility and structural simplicity

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The oxygen supply layer stabilizes the semiconductor, enhancing reliability by eliminating oxygen vacancies and increasing threshold voltage, resulting in improved operational stability.

Implementation Method 1

an oxygen supply layer, typically made of metal oxides like indium, zinc, and gallium, to supply oxygen to the semiconductor layer

Methodology Applied
Scientific EffectOxygen diffusion: Diffusion

Data Source

PatentUS12439697B2Display device
Publication Date: 2025.10.07 SAMSUNG DISPLAY CO LTD
  • US12439697B2 patent drawing
  • US12439697B2 patent drawing
  • US12439697B2 patent drawing

AI summary

A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.