Oxide Semiconductor Display Layout With Single-Mask Through-Holes
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Solution Overview
Problem
The existing display device manufacturing processes require multiple masks, leading to increased costs and reduced efficiency.
Innovation Solution
A display device structure is proposed that includes a substrate with a first semiconductor layer made of oxide semiconductor, a gate insulating film, conductive layers, and interlayer insulating films, where through-holes are used to connect the conductive layers to the semiconductor layers, reducing the need for multiple masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used in the manufacturing process to form contact holes and through-holes separately, then the manufacturing precision can be maintained, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent combines the formation of contact holes and through-holes into a single etching process using one mask pattern. The mask is designed with first regions for contact holes and second regions for through-holes, allowing both types of holes to be formed simultaneously in different areas of the semiconductor layer, thereby reducing the number of masks from multiple to one.
Solution Approach 2:
The mask is segmented into different functional regions: first mask regions that define contact hole positions and second mask regions that define through-hole positions. This segmentation allows a single mask to perform multiple functions that previously required separate masks, reducing process complexity while maintaining the ability to precisely form different hole types.
2Manufacturing precision
If multiple masks are used in the manufacturing process, then the manufacturing precision can be maintained, but the productivity decreases
Solution Approach 1:
The patent merges multiple etching steps into a single etching process by using one mask to define both contact holes and through-holes. This consolidation reduces the total number of manufacturing steps, eliminates the need for multiple mask alignment operations, and thereby improves productivity while maintaining the precision required for different hole formations.
Solution Approach 2:
The mask is designed in advance with predetermined first regions and second regions that correspond to the required contact hole and through-hole positions. This preliminary design allows both types of holes to be formed in a single process step without requiring subsequent adjustment or additional masking steps, thus enhancing manufacturing efficiency.
3Manufacturing precision
If multiple masks are used in the manufacturing process, then the manufacturing precision can be maintained, but the manufacturing cost increases
Solution Approach 1:
The patent combines multiple mask-making and application steps into a single mask usage. By designing one mask with both first regions for contact holes and second regions for through-holes, the patent eliminates the need for producing and applying multiple separate masks, thereby reducing material costs, labor costs, and overhead associated with multiple manufacturing steps.
Solution Approach 2:
The single mask serves multiple functions: it defines contact hole positions in first regions and through-hole positions in second regions. This multi-functionality replaces what previously required multiple specialized masks, reducing the overall cost of manufacturing while maintaining the precision needed for different hole types through the universal mask design.
Data Source
AI summary
A display device includes a substrate, a first semiconductor layer on the substrate and including an oxide semiconductor, a first gate insulating film on the first semiconductor layer, a first conductive layer on the first gate insulating film, a first interlayer insulating film on the first conductive layer, and a second conductive layer on the first interlayer insulating film and connected to the first semiconductor layer through a through-hole. The through-hole includes a first through-hole passing through the first interlayer insulating film, and a second through-hole overlapping the first through-hole and passing through the first semiconductor layer. The second conductive layer is in contact with a side surface of the first semiconductor layer exposed at the second through-hole.