Oxide Semiconductor Display Transistor Layout With Fewer Masks
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Solution Overview
Problem
Current transistor manufacturing processes for display panels are limited by the need for multiple masks and complex processes, which increase costs and reduce performance characteristics such as output saturation, particularly due to the use of amorphous silicon with low charge mobility and polysilicon requiring costly crystallization processes.
Innovation Solution
A transistor display panel design that includes a semiconductor with a drain region, channel, and source region, where the drain and gate electrodes, and source electrodes are formed in the same layer, reducing the number of masks and process steps by using a single conductive material for the driving voltage line and electrodes, and insulating layers to connect these elements efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If amorphous silicon is used for the semiconductor, then the manufacturing process is simple, but the charge mobility is low which limits transistor performance
Solution Approach 1:
The patent changes the material parameter from conventional amorphous silicon to oxide semiconductor, fundamentally altering the semiconductor's electrical properties to achieve higher charge mobility while maintaining compatibility with existing manufacturing processes
Solution Approach 2:
The patent employs composite material structure by combining oxide semiconductor with specific insulating layers (gate insulating layer, interlayer insulating layers) to create a system that achieves both high performance and manufacturing simplicity
2Reliability
If polysilicon is used for the semiconductor, then the charge mobility is high, but the crystallization process is required which increases manufacturing cost and process complexity
Solution Approach 1:
The patent changes the material parameter from polysilicon to oxide semiconductor, eliminating the need for high-temperature crystallization processes while maintaining high charge mobility characteristics
Solution Approach 2:
The patent uses oxide semiconductor which can be deposited at lower temperatures compared to polysilicon crystallization, effectively replacing a costly and complex process with a simpler, more economical alternative that achieves similar or better performance
3Reliability
If multiple masks and process steps are used for manufacturing, then the transistor characteristics can be improved, but the manufacturing cost increases
Solution Approach 1:
The patent merges the source electrode and drain electrode into a single conductive layer formation step, reducing the number of separate masking and deposition processes while maintaining proper electrical connections and transistor characteristics
Solution Approach 2:
The patent designs the electrode layer to serve multiple functions simultaneously - forming source, drain, and gate electrodes in a single process step, and establishing multiple electrical connections through the same insulating layer structure, thereby reducing overall process complexity
Data Source
AI summary
A transistor display panel including: a driving voltage line and a first electrode disposed on a substrate; a semiconductor overlapping the first electrode; and an electrode layer overlapping the semiconductor, the electrode layer including a drain electrode, a gate electrode, and a source electrode. The first electrode and the semiconductor are connected through the source electrode.