Oxide Layer Doping for GAA Nanosheet Leakage Control

The patent applies doping selectively only to the oxide layer above the sub channel, while leaving the oxide layers above the main channels undoped or differently doped. This localized modification creates a specific electric field configuration that suppresses sub channel leakage without affecting the main channel operation, thereby reducing power dissipation while minimizing the complexity increase to only the specific region where it is needed.

The patent modifies the electrical parameters of the oxide layer by introducing dopants that create electrically active defects. This changes the electric field distribution in the sub channel region, creating a local dipole that suppresses leakage currents. The parameter change is targeted specifically at the oxide layer's electrical properties rather than modifying the entire device structure, thus reducing power dissipation with limited complexity impact.

Instead of applying thick dielectric layers or substrate doping across the entire device, the patent applies doping locally only to the oxide layer above the sub channel. This localized approach creates the necessary electric field control precisely where needed to suppress sub channel leakage, avoiding the manufacturing complexity of global structural modifications while achieving effective leakage control.

The patent uses a relatively simple doping process applied to the oxide layer rather than requiring complex thick dielectric deposition or substrate modification processes. This approach uses a more straightforward, less complex manufacturing step (oxide layer doping) to achieve the leakage control function, reducing manufacturing complexity and process control requirements compared to legacy techniques.