Oxide Semiconductor Electrode Structure for Residue-Free Fabrication
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Solution Overview
Problem
There is a demand for a technique to manufacture high-quality semiconductor devices using metal oxides in semiconductor elements, where existing methods face challenges in achieving optimal results due to residue formation and contamination during the manufacturing process.
Innovation Solution
The semiconductor device configuration includes a first insulating layer with an oxide semiconductor, a first electrode with a metal oxide layer containing indium and tin, and a second electrode with tungsten, along with gate electrodes and a dielectric film, where dummy electrodes without metal oxide layers are used to reduce residue adherence and contamination, enabling efficient manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal oxide layers containing indium and tin are used for electrodes, then electrode functionality is improved, but residue formation and contamination increase during manufacturing
Solution Approach 1:
The electrode structure is segmented into multiple functional layers: a metal oxide layer (containing indium and tin) for electrochemical functionality, and a separate overcoat layer (such as aluminum oxide or aluminum nitride) for protection. This segmentation allows the metal oxide layer to perform its electrode function while the overcoat layer prevents residue formation and contamination, resolving the contradiction between functionality and manufacturing cleanliness.
2Reliability
If metal oxide layers are used in electrode structures, then electrochemical performance is improved, but blocking between pillars occurs due to residue adherence
Solution Approach 1:
The overcoat layer is applied in advance to the metal oxide layer before the manufacturing process proceeds to subsequent steps. This preliminary protective coating prevents residue from adhering to the metal oxide surface during processing, thereby preventing blocking between pillars while preserving the electrochemical performance of the underlying metal oxide electrode.
3Reliability
If metal oxide layers are used for electrodes, then device performance is improved, but chamber contamination increases during manufacturing
Solution Approach 1:
The overcoat layer acts as an intermediary between the metal oxide electrode layer and the manufacturing environment. This intermediate protective layer prevents direct interaction between the metal oxide material and the vacuum chamber or processing environment, thereby reducing chamber contamination while allowing the metal oxide layer to maintain its device performance functions.
Data Source
AI summary
A semiconductor device includes a first insulating layer; an oxide semiconductor formed in the first insulating layer, extending in a first direction, and having a first end and a second end; a first electrode including a first metal film that includes a first metal atom, and a first conductive film that is formed between the first metal film and the first end of the oxide semiconductor and includes metal oxide; a second electrode in contact with the second end of the oxide semiconductor; at least a pair of gate electrodes that face each other via an insulating film, and are interposed between the first end and the second end of the oxide semiconductor; and a first structure that is separated from the first electrode in a second direction intersecting the first direction, includes at least the first metal atom, and does not include the metal oxide.