Oxide Film FET With Hydrogenated Source and Drain Regions
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Solution Overview
Problem
Field effect transistors (FETs) using oxide films as semiconductor layers face variations in transistor characteristics due to parasitic resistance and positional inaccuracies between source, drain, and gate electrodes, which affect the performance and image quality of display devices.
Innovation Solution
Incorporating hydrogen or deuterium into the oxide film to create source and drain parts with higher concentrations than the channel part, and using self-alignment methods to form these parts in relation to the gate electrode, thereby reducing resistivity and improving electrical connection and positional precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen or deuterium is added to the oxide film to create source and drain parts, then electrical connection and conductivity are improved, but the complexity of the manufacturing process increases
Solution Approach 1:
The patent applies local quality by adding hydrogen or deuterium specifically to the source and drain parts of the oxide film, while keeping the channel region unchanged. This localized modification improves electrical connection at the source/drain interfaces without affecting the overall device structure or requiring complex manufacturing changes throughout the entire device.
Solution Approach 2:
The patent changes the chemical composition parameter of the oxide film by introducing hydrogen or deuterium atoms into the source and drain regions. This parameter change reduces resistivity and improves electrical connection stability, achieving better reliability through a relatively simple compositional modification rather than complex structural changes.
2Manufacturing precision
If self-alignment methods are used to form source and drain parts, then positional precision is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent employs self-alignment methods where the source and drain parts are automatically positioned relative to the gate electrode and each other through the inherent properties of the film formation process. The oxide film itself serves as the alignment reference, eliminating the need for external alignment tools or complex multi-step positioning procedures.
3Temperature
If polycrystalline oxide film is used, then film formation at low temperature is enabled, but electron mobility is reduced due to grain boundary scattering
Solution Approach 1:
The patent applies local quality by modifying only the source and drain regions with hydrogen or deuterium addition, while maintaining the amorphous structure of the channel region. This localized approach reduces scattering at the source/drain interfaces without requiring the entire film to be crystalline, thus preserving electron mobility in the channel while still benefiting from low-temperature formation.
Solution Approach 2:
The patent creates a composite structure where the oxide film contains regions with different compositions - the channel region maintains an amorphous structure for high electron mobility, while the source and drain regions have modified composition with added hydrogen or deuterium for low resistivity. This composite approach combines the advantages of both amorphous and modified regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes electrical connections, reduces hysteresis, and enhances the uniformity and reliability of FETs, leading to improved performance and reduced variations in transistor characteristics, which in turn improves the image quality of display devices.
Implementation Method 1
the oxide film includes one of a source part and a drain part which is added with one of hydrogen and deuterium
Data Source
AI summary
The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.