Oxide Film Epitaxy and Oxygen Diffusion for Crystallinity
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Solution Overview
Problem
Conventional methods for forming oxide films using mist epitaxy result in high film formation rates but often lead to low crystallinity due to oxygen vacancies, compromising the quality of the oxide film.
Innovation Solution
A two-step process involving initial mist epitaxy at a lower temperature for rapid film growth, followed by exposure to a fluid containing oxygen atoms at a higher temperature to fill vacancies and enhance crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is at a lower temperature during epitaxial growth, then the film formation rate is higher, but oxygen vacancies are easily formed and crystallinity is reduced
Solution Approach 1:
The patent divides the film formation process into two distinct stages: a first process for rapid film growth at lower temperature, and a second process for crystallinity improvement at higher temperature. This segmentation allows each stage to optimize for its specific objective without compromise
Solution Approach 2:
The first process performs preliminary film formation at lower temperature to quickly establish the oxide film structure, and then the second process applies higher temperature treatment to subsequently improve crystallinity. The preliminary action of forming the film structure enables the subsequent crystallinity enhancement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of oxide films with high crystallinity within a short time, reducing oxygen vacancies and improving the film's structural quality.
Implementation Method 1
epitaxially grow the oxide film on the surface of the substrate
Implementation Method 2
the oxygen atoms easily diffuse into the oxide film
Data Source
AI summary
A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.