Semiconductor Oxide Film Quality via Segmented Plasma
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Solution Overview
Problem
The quality of oxide films formed on substrates during semiconductor device manufacturing is not adequately improved by existing methods, which can lead to surface roughness and cohesion issues.
Innovation Solution
A method involving a substrate processing apparatus that forms a silicon-containing film on a substrate with carbon-containing films, followed by the generation of first and second plasmas of oxygen-containing gases to create a silicon/oxygen-containing film and then a silicon oxide film, respectively, to enhance film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional single plasma process is used to form an oxide film, then the processing time is short, but the film quality deteriorates due to Si atom migration and desorption
Solution Approach 1:
The oxide film formation process is divided into two distinct plasma treatment stages: a first plasma treatment to form a silicon/oxygen-containing film, followed by a second plasma treatment to form the final silicon oxide film. This segmentation allows each stage to optimize for its specific function, preventing Si atom migration and desorption while maintaining reasonable processing time.
Solution Approach 2:
The first plasma treatment performs a preliminary action by forming a silicon/oxygen-containing film that serves as an intermediate layer. This preliminary film preparation prevents subsequent Si atom migration and desorption during the second plasma treatment, thereby improving the final oxide film quality without significantly extending the total processing time.
2Productivity
If high energy plasma is used to form oxide film quickly, then productivity increases, but surface roughness increases and film cohesion deteriorates
Solution Approach 1:
The plasma treatment is segmented into two stages with different energy levels and durations. The first plasma treatment uses moderate energy to form an intermediate silicon/oxygen-containing film, while the second plasma treatment uses optimized energy conditions to complete the oxide film formation. This segmentation prevents the surface roughness and cohesion issues that would result from using high energy plasma throughout the entire process.
Solution Approach 2:
The plasma treatment parameters (power, pressure, gas flow rate) are changed between the two treatment stages. The first stage uses a set of parameters optimized for initial oxide formation, while the second stage uses different parameters optimized for completing the film with smooth surface and good cohesion. This parameter optimization maintains productivity while improving film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively improves the quality of the oxide film by suppressing Si atom migration and desorption, maintaining surface roughness and preventing cohesion, thereby enhancing the semiconductor device's performance.
Implementation Method 1
forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate
Implementation Method 2
forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate
Implementation Method 3
forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate
Data Source
AI summary
Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate; (c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and (d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate after performing (c).