Oxide Semiconductor Film Etching via Reduction Layer Sputtering
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Solution Overview
Problem
Current etching methods for oxide semiconductor films face challenges in improving processing speed while minimizing deterioration in device characteristics, particularly due to changes in composition and grain boundary density during the etching process.
Innovation Solution
The proposed method involves forming a reduction layer using a reducing gas and sputtering it with a rare gas to enhance etching speed, and using a combination of hydrogen and oxygen plasma to maintain the composition and grain boundary density of the oxide semiconductor film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etching methods are used to increase processing speed, then etching speed is improved, but composition change and grain boundary density change occur leading to device characteristic deterioration
Solution Approach 1:
The etching process is divided into multiple sequential steps: first forming a reduction layer with reducing gas plasma, then sputtering the reduction layer with rare gas plasma, and finally performing composition recovery with oxygen-containing gas plasma. This segmentation allows each step to optimize for its specific function, achieving high etching speed while maintaining film composition and device characteristics.
Solution Approach 2:
Before the main etching step, a reduction layer is preliminarily formed on the oxide semiconductor film surface using reducing gas plasma. This preliminary action modifies the surface composition to enhance subsequent sputtering etching speed, while the final composition recovery step ensures the original film properties are restored, resolving the contradiction between speed and reliability.
2Productivity
If reducing gas plasma is used to form reduction layer, then etching speed is improved, but composition change occurs
Solution Approach 1:
The reduction layer formed by reducing gas plasma is temporarily discarded through sputtering removal, and the original composition is recovered by oxygen-containing gas plasma treatment. This discarding and recovering process allows the benefits of reduction layer formation (higher etching speed) while eliminating its adverse effect (composition change), thus resolving the technical contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves processing speed and stability, reducing the risk of device characteristic deterioration by maintaining the composition and increasing grain boundary density in the oxide semiconductor film.
Implementation Method 1
forming a reduction layer in an oxide semiconductor film with use of a reducing gas
Implementation Method 2
sputtering the reduction layer with use of a rare gas
Implementation Method 3
converting each of the first gas and the second gas into plasma
Data Source
AI summary
A first etching method of an oxide semiconductor film according to an embodiment of the present disclosure includes: forming a reduction layer in an oxide semiconductor film with use of a reducing gas; and sputtering the reduction layer with use of a rare gas.